MT46V256M4TG-75:A Micron Technology Inc, MT46V256M4TG-75:A Datasheet - Page 25

• Manufacturer Part Number: MT46V256M4TG-75:A
• Description: IC DDR SDRAM 1GBIT 7.5NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V256M4TG-75:A

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 17:
Table 18:
Table 19:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
AC Characteristics
Parameter
Speed
Speed
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
-75
-75
-75
-75
-75
-75
Electrical Characteristics and Recommended AC Operating Conditions (-75) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 26;
0°C ≤ T
Input Slew Rate Derating Values for Addresses and Commands
Note: 15 applies to the entire table; Notes appear on page 26;
0°C ≤ T
Input Slew Rate Derating Values for DQ, DQS, and DM
Note: 32 applies to the entire table; Notes appear on page 26;
0°C ≤ T
A
A
A
≤ +70°C; V
≤ +70°C; V
≤ +70°C; V
Slew Rate
Slew Rate
0.500 V/ns
0.400 V/ns
0.300 V/ns
0.500 V/ns
0.400 V/ns
0.300 V/ns
DD
DD
DD
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
DD
DD
DD
= +2.5V ±0.2V
1Gb
= +2.5V ±0.2V
= +2.5V ±0.2V
1.00
1.05
1.10
0.50
0.55
0.60
t
t
25
DS
IS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
Electrical Specifications – DC and AC
t
t
t
XSNR
XSRD
t
WTR
n/a
WR
1Gb: x4, x8, x16 DDR SDRAM
127.5
0.50
0.55
0.60
Min
t
200
t
DH
15
IH
t
1
1
1
1
QH -
-75
t
DQSQ
Max
©2003 Micron Technology, Inc. All rights reserved.
–
–
–
–
Units
t
t
ns
ns
ns
CK
CK
Units
Units
ns
ns
ns
ns
ns
ns
Notes
26