MT46V256M4TG-75:A Micron Technology Inc, MT46V256M4TG-75:A Datasheet - Page 19

• Manufacturer Part Number: MT46V256M4TG-75:A
• Description: IC DDR SDRAM 1GBIT 7.5NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V256M4TG-75:A

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 13:
Table 14:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Parameter
Parameter
Delta input/output capacitance: DQ0–DQ3 (x4), DQ0–DQ7 (x8)
Delta input capacitance: Command and address
Delta input capacitance: CK, CK#
Input/output capacitance: DQ, DQS, DM
Input capacitance: Command and address
Input capacitance: CK, CK#
Input capacitance: CKE
Delta input/output capacitance: DQ0–DQ7, LDQS, LDM
Delta input/output capacitance: DQ8–DQ15, UDQS, UDM
Delta input capacitance: Command and address
Delta input capacitance: CK, CK#
Input/output capacitance: DQ, LDQS, UDQS, LDM, UDM
Input capacitance: Command and address
Input capacitance: CK, CK#
Input capacitance: CKE
Capacitance (x4, x8 TSOP)
Note: 14 applies to the entire table; Notes appear on page 26
Capacitance (x16 TSOP)
Note: 14 applies to the entire table; Notes appear on page 26
19
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
Symbol
Electrical Specifications – DC and AC
DC
DC
DC
DC
DC
DC
DC
C
C
C
C
C
C
C
C
IO
IO
I
I
I
I
I
I
IOU
IOL
1
2
3
1
2
3
IO
I
I
I
I
1
2
1
2
1Gb: x4, x8, x16 DDR SDRAM
Min
Min
4.0
2.0
2.0
2.0
4.0
2.0
2.0
2.0
–
–
–
–
–
–
–
Max
Max
0.50
0.50
0.25
0.50
0.50
0.50
0.25
©2003 Micron Technology, Inc. All rights reserved.
5.0
3.0
3.0
3.0
5.0
3.0
3.0
3.0
Units
Units
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
Notes
Notes
25
30
30
25
25
30
30