MT46V256M4TG-75:A Micron Technology Inc, MT46V256M4TG-75:A Datasheet - Page 16

• Manufacturer Part Number: MT46V256M4TG-75:A
• Description: IC DDR SDRAM 1GBIT 7.5NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V256M4TG-75:A

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 10:
Table 11:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Parameter/Condition
Parameter/Condition
Supply voltage
I/O supply voltage
I/O reference voltage
I/O termination voltage (system)
Input high (logic 1) voltage
Input low (logic 0) voltage
Input leakage current:
Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current:
(DQ are disabled; 0V ≤ V
Full-drive option output
levels: (x4, x8, x16)
Reduced-drive option
output levels: (x16 only)
Ambient operating
temperatures
Input high (logic 1) voltage
Input low (logic 0) voltage
I/O reference voltage
DC Electrical Characteristics and Operating Conditions (-6T, -75)
Notes: 1–5, 17 apply to the entire table; Notes appear on page 26; V
AC Input Operating Conditions
Notes: 1–5, 17 apply to the entire table; Notes appear on page 26;
0°C ≤ T
IN
≤ V
A
≤ +70°C; V
DD
OUT
, V
REF
≤
V
High current (V
V
V
Low current (V
0.373V, maximum V
maximum V
High current (V
V
V
Low current
0.763V, maximum V
maximum V
Commercial
Industrial
pin 0V ≤ V
DD
DD
REF
DD
REF
DD
Q
Q - 0.373V, minimum
, minimum V
Q - 0.763V, minimum
, minimum V
Q = +2.5V ±0.2V, V
)
IN
TT
TT
(V
≤ 1.35V
)
)
OUT
OUT
OUT
OUT
TT
TT
=
)
)
=
=
=
REF
REF
Symbol
V
V
V
REF
IH
DD
IL
,
,
(
(
AC
(
AC
AC
= +2.5V ±0.2V (V
)
)
)
Symbol
16
V
V
V
V
I
V
IH
I
IL
V
I
OHR
I
I
DD
OLR
T
T
OH
OZ
REF
OL
I
DD
(
(
TT
A
A
I
DC
DC
Q
)
)
0.49 × V
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
REF
Electrical Specifications – DC and AC
0.49 × V
Min
V
DD
V
+ 0.310
REF
–
REF
+16.8
Q = +2.6V ±0.1V, V
–16.8
Min
+2.3
+2.3
–0.3
–40
DD
+9
–2
–5
–9
+ 0.15
0
- 0.04
Q
DD
DD
1Gb: x4, x8, x16 DDR SDRAM
Q
Q = +2.5V ±0.2V, V
0.51 × V
V
REF
0.51 × V
V
V
Max
V
REF
REF
- 0.310
–
DD
Max
+2.7
+2.7
+70
+85
+2
+5
DD
+ 0.04
–
–
–
–
- 0.15
+ 0.3
DD
©2003 Micron Technology, Inc. All rights reserved.
Q
DD
= +2.6V ±0.1V for -5B)
Q
Units
DD
V
V
V
Units
mA
mA
mA
mA
µA
µA
°C
°C
= +2.5V ±0.2V
V
V
V
V
V
V
15, 29, 41
15, 29, 41
Notes
37, 42, 45
Notes
37, 42
38, 40
39, 40
7, 45
8, 45
7
29
29