CY7C1471BV25_11 CYPRESS [Cypress Semiconductor], CY7C1471BV25_11 Datasheet - Page 21

• Manufacturer Part Number: CY7C1471BV25_11
• Description: 72-Mbit (2 M x 36/4 M x 18/1 M x 72) Flow-Through SRAM with NoBL Architecture
• Manufacturer: CYPRESS [Cypress Semiconductor]

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied .......................................... –55C to +125 C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in Tri-State .........................................–0.5 V to V
Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-15013 Rev. *H
V
V
V
V
V
V
I
I
I
I
I
I
I
14. Overshoot: V
15. T
16. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
SB1
SB2
SB3
SB4
Parameter
DD
DDQ
OH
OL
IH
IL
[16]
Power-up
: assumes a linear ramp from 0 V to V
IH
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
Output Leakage Current GND  V
V
Current
Automatic CE
Power Down
Current—TTL Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—TTL Inputs
(AC) < V
DD
Operating Supply
DD
DDQ
Description
DD
Relative to GND ......–0.5 V to +3.6 V
+ 1.5 V (pulse width less than t
Relative to GND ..... –0.5 V to +V
[14, 15]
[14]
[14]
For 2.5 V IO
For 2.5 V IO, I
For 2.5 V IO, I
For 2.5 V IO
For 2.5 V IO
GND  V
Input = V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0, inputs static
V
V
f = f
V
V
f = 0, inputs static
DD
DD
DD
IN
DD
IN
DD
IN
DD
IN
(min.) within 200 ms. During this time V
MAX
MAX
MAX
 V
 0.3 V or V
 0.3 V or V
 V
= Max, I
= Max, Device Deselected,
= Max, Device Deselected,
= Max, Device Deselected, or
= Max, Device Deselected,
IH
DD
, inputs switching
, inputs switching
DDQ
= 1/t
CYC
I
I
SS
DD
SS
DD
or V
 V
 V
– 0.3 V or V
/2). Undershoot: V
OUT
CYC
+ 0.5 V
DDQ
DDQ,
IN
OH
OL
IN
IN
 V
=1.0 mA
= 0 mA,
=–1.0 mA
DD
> V
> V
Output Disabled
IL
Test Conditions
,
DD
DDQ
IN
 0.3 V,
– 0.3 V,
IL
– 0.3 V
(AC) > –2 V (pulse width less than t
DC Input Voltage ................................. –0.5 V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch Up Current ................................................... > 200 mA
Operating Range
Commercial
Industrial
Range
IH
< V
All speeds
All Speeds
6.5 ns cycle, 133 MHz
8.5 ns cycle, 100 MHz
6.5 ns cycle, 133 MHz
8.5 ns cycle, 100 MHz
6.5 ns cycle, 133 MHz
8.5 ns cycle, 100 MHz
CY7C1473BV25, CY7C1475BV25
DD
and V
–40 °C to +85 °C
0 °C to +70 °C 2.5 V – 5% / + 5% 2.5 V – 5%
Temperature
DDQ
Ambient
< V
DD
.
CYC
/2).
2.375
2.375
–0.3
Min
–30
2.0
1.7
–5
–5
–5
CY7C1471BV25
–
–
–
–
–
–
–
–
–
–
–
V
DD
V
DD
2.625
Max
V
305
275
170
170
120
170
170
135
0.4
0.7
30
Page 21 of 33
+ 0.3 V
DD
DD
–
5
–
5
–
5
+ 0.5 V
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
V
V
V
V
V
V
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