hm5216165 Elpida Memory, Inc., hm5216165 Datasheet - Page 38
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hm5216165
Manufacturer Part Number
hm5216165
Description
16 M Lvttl Interface Sdram 512-kword ? 16-bit ? 2-bank
Manufacturer
Elpida Memory, Inc.
Datasheet
1.HM5216165.pdf
(52 pages)
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HM5216165 Series
AC Characteristics (Ta = 0 to 70°C, V
Parameter
Command (CS, RAS, CAS, WE, DQM)
setup time
Command (CS, RAS, CAS, WE, DQM)
hold time
Ref/Active to Ref/Active command period
Active to precharge command period
Active to precharge on full page mode
Active command to column command
(same bank)
Precharge to active command period
Write recovery or data-in to precharge lead
time
Active (a) to Active (b) command period
Transition time (rise to fall)
Refresh period
Notes: 1. AC measurement assumes t
Test Conditions
38
Input and output timing reference levels: 1.4 V
Input waveform and output load: See following figures
Input
2. Access time is measured at 1.40 V. Load condition is CL = 50 pF with current source.
3. t
4. t
5. t
LZ
HZ
CES
V SS
2.8 V
(max) defines the time at which the outputs achieves the low impedance state.
(max) defines the time at which the outputs achieves the high impedance state.
defines CKE setup time to CKE rising edge except power down exit command.
t
T
Data Sheet E0167H10
T
= 1 ns. Reference level for timing of input signals is 1.40 V.
Symbol
t
t
t
t
t
t
t
t
t
t
t
CS
CH
RC
RAS
RASC
RCD
RP
DPL
RRD
T
REF
t
CC
T
, V
CC
80%
20%
Q = 3.3 V ± 0.3 V, V
HM5216165
-10H
Min
2
1
90
60
—
30
30
15
20
1
—
Max
—
—
—
120000 70
120000 —
—
—
—
—
5
64
Output
I/O
-12
Min
3
1
100
30
30
15
20
1
—
SS
Max
—
—
—
120000 ns
120000 ns
—
—
—
—
5
64
, V
CL
500
SS
Q = 0 V) (cont)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ms
+1.4 V
Notes
1
1
1
1
1
1
1
1
1