k4r881869m Samsung Semiconductor, Inc., k4r881869m Datasheet - Page 57

• Manufacturer Part Number: k4r881869m
• Description: 288mbit Rdram 512k X 18 Bit X 2*16 Dependent Banks Direct Rdramtm
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869M
Absolute Maximum Ratings
I
a. The CMOS interface consumes power in all power states.
b. This does not include the IOL sink current. The RDRAM dissipates IOL VOL in each output driver when a logic one is driven.
DD
Symbol
V
V
T
I
I
I
I
I
I
I
DD,PDN
DD,NAP
DD,STBY
DD,ATTN
DD,ATTN-W
DD,ATTN-R
DD
STORE
I,ABS
DD,ABS
value
- Supply Current Profile
, V
DDA,ABS
RDRAM blocks consuming power
Self-refresh only for INIT.LSR=0
T/RCLK-Nap
T/RCLK, ROW-demux
T/RCLK, ROW-demux, COL-demux
T/RCLK, ROW-demux,COL-demux,DQ-demux,1 WR-SenseAmp, 4 ACT-
Bank
T/RCLK, ROW-demux,COL-demux,DQ-mux,1 RD-SenseAmp, 4 ACT-
Bank
b
Parameter
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
Table 23: Absolute Maximum Ratings
Table 24: Supply Current Profile
a
Page 55
Max
TBD
TBD
TBD
TBD
TBD
TBD
-800
-45
Min
- 0.3
- 0.5
- 50
Preliminary
Direct RDRAM
Rev. 0.9 Jan. 2000
TBD
TBD
TBD
TBD
TBD
TBD
Max
-711
-45
V
V
Max
DD
DD
100
+0.3
+1.0
-53.3
TBD
TBD
TBD
TBD
TBD
TBD
Max
-600
Unit
V
V
C
Unit
mA
mA
mA
mA
mA
A
™