k4r881869m Samsung Semiconductor, Inc., k4r881869m Datasheet - Page 13

• Manufacturer Part Number: k4r881869m
• Description: 288mbit Rdram 512k X 18 Bit X 2*16 Dependent Banks Direct Rdramtm
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869M
COL4
CTM/CFM
DQA8..0
DQB8..0
ROW2
When M=1, the MA and MB
When M=0, all data bytes are
..COL0
..ROW0
CTM/CFM
fields control writing of
written unconditionally.
individual data bytes.
COL4
COL3
COL2
COL1
COL0
T
Transaction a: WR
0
ACT a0
T
1
T
2
T
T
17
Figure 5: Mapping Between COLM Packet and D Packet for WR Command
M=1 MA6 MA4 MA2 MA0
3
T
4
T
5
MA7 MA5 MA3 MA1
MB7 MB4 MB1
MB6 MB3 MB0
MB5 MB2
COLM Packet
T
6
T
7
T
T
18
8
a0 = {Da,Ba,Ra}
T
9
the M bit of the COLM packet is one.
the M bit of the COLM packet is one.
WR a1
controls writing (=1) or no writing
(=0) of the indicated DA bits when
T
controls writing (=1) or no writing
(=0) of the indicated DB bits when
Each bit of the MA7..MA0 field
10
Each bit of the MB7..MB0 field
T
11
T
12
T
T
19
13
T
14
T
15
t
T
RTR
16
T
retire (a1)
MSK (a1)
17
T
a1 = {Da,Ba,Ca1}
T
20
18
T
19
t
Page 11
D (a1)
T
CWD
20
T
21
CTM/CFM
T
22
DQB8
DQB7
DQB1
DQB0
DQA8
DQA7
DQA1
DQA0
T
23
T
PRER a2
24
T
25
T
26
T
27
a3 = {Da,Ba}
T
DB8
DB7
DB1
DB0
MB0
DA8
DA7
DA1
DA0
MA0
28
T
29
T
T
19
DA17 DA26 DA35 DA45 DA53 DA62
DA16 DA25 DA34 DA44 DA52 DA61 DA70
DA10 DA19 DA28 DA37 DA46 DA55 DA64
30
DB17 DB26 DB35 DB45 DB53 DB62
DB16 DB25 DB34 DB44 DB52 DB61 DB70
DB10 DB19 DB28 DB37 DB46 DB55 DB64
MB1
DA9 DA18 DA27 DA36 DA45 DA54 DA63
MA1
DB9
T
31
T
32
ACT b0
DB18 DB27 DB36 DB45 DB54 DB63
MB2
MA2
T
33
T
34
T
T
20
D Packet
35
MB3
MA3
Preliminary
T
Direct RDRAM
Rev. 0.9 Jan. 2000
36
T
37
MA4
MB4
T
38
T
39
T
T
21
40
MB5
MA5
T
41
T
42
MB6
MA6
T
43
T
44
T
T
22
DA71
45
DB71
MB7
MA7
T
46
T
47
™