kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 91

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

3.4.3.3 Locked-tight NAND Array Write Protection State
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
A block that is in a locked-tight state can only be changed to locked state after a Cold or Warm Reset. Unlock and Lock command
sequences will not affect its state. This is an added level of write protection security.
A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command. locked-tight blocks
will revert to a locked state following a Cold or Warm Reset.
3.4.4
NAND Flash Array Write Protection State Diagram
+Lock-tight block Command
Lock block Command
Start block address
Start block address
*Note: If the 1st Block is set to be OTP, Block 0 will always be Lock Status
RP pin: High
Cold reset or
Warm reset
RP pin: High
&
or
&
Locked-tight
Lock-tight
unlock
unlock
Lock
Lock
Lock
Lock
Lock
91
Lock-Tight Command Sequence:
Start block address+Lock-tight block command (002Ch)
+All Block Unlock Command
Start block address (000h)
Cold reset or
Warm reset
+Unlock block Command
RP pin: High
Start block address
RP pin: High
&
&
Power On
FLASH MEMORY