kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 111

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

2X Program Operation Flow Diagram
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
Note 1) DBS must be set before data input.
Write ’BSA, BSC’ of DataRAM
Add: F100h DQ=DFS*’, FBA
Add: F107h DQ=FPA, FSA
Add: F200h DQ=BSA, BSC
Write Data into DataRAM
Select DataRAM for DDP
Write ’DFS*, FBA’ of Flash
Write ’FPA, FSA’ of Flash
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA must be an even block.
4) These registers must be set as BSA=1000, BSC=00 and FSA=00.
5) ’Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
Add: F101h DQ=DBS*
ADD: DP DQ=Data-in
Completed?
Data Input
Start
* DBS, DFS is for DDP
YES
1)
2)
4)
3)
4)
NO
Write 0 to interrupt register
Write ’2X Program’ Command
Add: F240h DQ[10]=Error
Add: F241h DQ[15]=INT
Add: F220h DQ=007Dh
Add: F241h DQ=0000h
low to high transition
Wait for INT register
Program completed
Read Controller
Status Register
*
111
DQ[10]=0?
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
YES
5)
FLASH MEMORY
Program Error
NO