kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 147

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

5.7
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
NOTE :
1. Target Clock frequency is 83Mhz
5.8 AC Characteristics for Burst Write Operation
Clock
Clock Cycle
AVD Setup to CLK
AVD Hold Time from CLK
Address Setup Time to CLK
Address Hold Time from CLK
Data Setup Time to CLK
Data Hold Time from CLK
WE Setup Time to CLK
WE Hold Time from CLK
CLK High or Low Time
CE high pulse width
CLK to RDY Valid
CLK to RDY Setup Time
RDY Setup Time to CLK
CE low to RDY valid
Clock to CE disable
CE Setup Time to CLK
CE Disable to Output & RDY High Z
WE Cycle Time
AVD low pulse width
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
WE Pulse Width High
WE Disable to AVD Enable
CE Low to RDY Valid
CE Disable to Output & RDY High Z
AC Characteristics for Asynchronous Write
Parameter
See Timing Diagrams 6.7
See Timing Diagrams 6.8, 6.9 and 6.10
Parameter
Symbol
CLK
t
t
t
t
t
t
CLKH/L
t
t
t
t
t
t
t
t
t
t
t
CEHP
RDYO
RDYS
t
AVDS
AVDH
RDYA
WDS
WDH
WES
WEH
ACS
ACH
CER
CEH
CES
CLK
CEZ
1)
t
CLK
Min
147
15
10
1
5
2
5
6
5
2
5
6
4
6
6
-
-
-
-
/3
Symbol
66MHz
t
t
t
AAVDS
AAVDH
t
t
t
t
t
AVDP
t
t
t
WPH
WEA
t
t
WPL
CER
CEZ
WC
DS
DH
CS
CH
Max
66
11
11
15
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
70
12
30
40
30
15
5
6
0
0
0
-
-
Min
4.5
12
10
1
4
2
4
6
4
2
4
6
5
3
6
-
-
-
-
FLASH MEMORY
83MHz
Max
15
20
Max
-
-
-
-
-
-
-
-
-
-
-
83
15
20
9
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MHz
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns