kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 127

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
OTP Block Program Operation Flow Chart
Note 1) FBA(NAND Flash Block Address) could be omitted or any address in a single die package.
Write ’OTP Access’ Command
Write 0 to interrupt register
Write ’DFS*, FBA’ of Flash
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA should point the unlocked area address among NAND Flash Array address map.
4) ’Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
Add: F100h DQ=DFS*, FBA
Write Data into DataRAM
Select DataRAM for DDP
Add: F241h DQ[15]=INT
Add: F241h DQ=0000h
Add: F220h DQ=0065h
FBA must be an address of a chip containing OTP block that is supposed to be accessed in DDP.
Add: F101h DQ=DBS*
low to high transition
Wait for INT register
Add: DP DQ=Data-in
Completed?
Data Input
Start
* DBS, DFS is for DDP
2)
1)
4)
NO
OTP Programming completed
Write ’BSA, BSC’ of DataRAM
Automatically
Write 0 to interrupt register
Add: F240h DQ[10]=0(Pass)
Add: F200h DQ=BSA, BSC
Add: F200h DQ=BSA, BSC
Add: F107h DQ=FPA, FSA
Write ’FPA, FSA’ of Flash
checked
Write Program command
Add: F241h DQ[15]=INT
/NAND Flash Core reset
Add: F100h DQ=FBA
Add: F241h DQ=0000h
low to high transition
Write ’FBA’ of Flash
DQ=0080h or 001Ah
Wait for INT register
Do Cold/Warm/Hot
Read Controller
Status Register
127
Add: F220h
OTP
OTP Exit
L
=0?
YES
3)
4)
NO
DQ[14]=1(Lock), DQ[10]=1(Error)
Add: F240h DQ[10]=1(Error)
FLASH MEMORY
Add: F241h DQ[15]=INT
/NAND Flash Core reset
Automatically
low to high transition
Wait for INT register
Do Cold/Warm/Hot
updated
Update Controller
Read Controller
Status Register
Status Register
Add: F240h
OTP Exit