kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 108

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

3.11
The Program operation is used to program data from the on-chip BufferRAMs into the NAND FLASH memory array.
The device has two 2KB data buffers, each 1 Page (2KB + 64B) in size. Each page has 4 sectors of 512B each main area and 16B
spare area. The device can be programmed in units of 1~4 sectors.
The architecture of the DataRAMs permits a simultaneous data-write operation from the Host to one of data buffers and a program
operation from the other data buffer to the NAND Flash Array memory. Refer to Section 3.12.2, "Write While Program Operation", for
more information.
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
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Program Operation
See Timing Diagram 6.12
From the LSB page to MSB page
DATA IN: Data (1)
Data register
(64)
(32)
(3)
(2)
(1)
:
:
Data (64)
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Page 31
Page 2
Page 1
Page 0
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data register
FLASH MEMORY
(64)
(32)
(1)
(3)
(2)
:
:
Data (64)