kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 121

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

3.13.3
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
After a Multi-Block Erase Operation, verify Erase Operation result of each block with Multi-Block Erase Verify Command combined
with address of each block.
If a failed address is identified, it must be managed by firmware.
Multi Block Erase/ Multi Block Erase Verify Read Flow Chart
Note 1) DFS should be a fixed value, for Multi Block Erase is performed within a single chip.
Write 0 to interrupt register
Write ’DFS
Add: F100h DQ=DFS, FBA
Add: F241h DQ=[15]=INT
Select DataRAM for DDP
Write ’Multi Block Erase’
Add: F220h DQ=0095h
Add: F241h DQ=0000h
Add: F101h DQ=DBS*
low to high transition
Wait for INT register
2) ’Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
Final Multi Block
Command
Erase?
1)
Start
Multi-Block Erase Verify Read Operation
, FBA’ of Flash
YES
2)
NO
Write 0 to interrupt register
Write 0 to interrupt register
Add: F241h DQ=[15]=INT
Add: F241h DQ=[15]=INT
Write ’Multi Block Erase
Verify Read Command’
Add: F241h DQ=0000h
Add: F220h DQ=0094h
Add: F241h DQ=0000h
Add: F220h DQ=0071h
low to high transition
Add: F100h DQ=FBA
low to high transition
Add: F100h DQ=FBA
Write ’FBA’ of Flash
Wait for INT register
Wait for INT register
Write ’FBA’ of Flash
Write ’Block Erase
Command’
121
2)
2)
NO
Multi Block Erase completed
Add: F240h DQ[10]=Error
FLASH MEMORY
Erase completed
Read Controller
Final Multi Block
Status Register
Erase Address?
Multi Block Erase Verify Read
DQ[10]=0?
*DBS, DFS is for DDP
YES
YES
Erase Error
NO