kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 126
kfm2g16q2m-deb8
Manufacturer Part Number
kfm2g16q2m-deb8
Description
2gb Muxonenand M-die
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KFM2G16Q2M-DEB8.pdf
(177 pages)
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3.14.2 OTP Block Program Operation
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
An OTP Block Program Operation accesses the OTP area and programs content from the DataRAM on-chip buffer to the designated
page(s) of the OTP.
A memory location in the OTP area can be programmed only one time (no erase operation permitted).
The OTP area is programmed using the same sequence as normal program operation after being accessed by the command (see
section 3.8 for more information).
Programming the OTP Area
• Issue the OTP Access Command
• Write data into the DataRAM (data can be input at anytime between the "Start" and "Write Program" commands
• Issue a Flash Block Address (FBA) which is unlocked area address of NAND Flash Array address map.
• Issue a Write Program command to program the data from the DataRAM into the OTP
• When the OTP Block programming is complete,
do a Cold-, Warm-, Hot-, NAND Flash Core Reset to exit the OTP Access mode.
126
FLASH MEMORY
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