TIM5964-30SL Toshiba Semiconductor, TIM5964-30SL Datasheet - Page 2

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TIM5964-30SL

Manufacturer Part Number
TIM5964-30SL
Description
MICROWAVE POWER GaAs FET
Manufacturer
Toshiba Semiconductor
Datasheet
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
PACKAGE OUTLINE (2-16G1B)
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 C)
Channel Temperature
Storage
4 – C1.0
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260 C.
CHARACTERISTICS
(2)
16.4 MAX.
24.5 MAX.
(1)
20.4 0.3
(3)
0.7 0.15
TIM5964-30SL
2
SYMBOL
V
V
T
I
T
(2)
P
DS
DS
GS
stg
ch
T
UNIT
W
V
V
A
C
C
www.DataSheet4U.com
Unit in mm
(1) Gate
(2) Source
(3) Drain
-65 to +175
RATING
115.4
175
15
20
-5

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