TIM5964-35SLA Toshiba, TIM5964-35SLA Datasheet

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TIM5964-35SLA

Manufacturer Part Number
TIM5964-35SLA
Description
Manufacturer
Toshiba
Datasheet

Specifications of TIM5964-35SLA

Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIM5964-35SLA
Manufacturer:
SUMITOMO
Quantity:
20 000
Part Number:
TIM5964-35SLA-422
Manufacturer:
TOSHIBA
Quantity:
5 000
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended gate resistance(Rg) : Rg= 28 Ω ( MAX.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
LOW INTERMODULATION DISTORTION
HIGH POWER
IM3=-45 dBc at Po= 35.0dBm,
Single Carrier Level
P1dB=45.5dBm at 5.9GHz to 6.4GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
IM
GSoff
DS1
DS2
DSS
ΔG
gm
GSO
1dB
1dB
add
3
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
GS
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
f
= 10.5A
= 140mA
= -420μA
Two-Tone Test
= 5.9 to 6.4GHz
CONDITIONS
CONDITIONS
= 3V
=
=
= 0V
Po=35.0dBm
V
3V
3V
X Rth(c-c)
DS
HIGH GAIN
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
G1dB=9.0dB at 5.9GHz to 6.4GHz
MICROWAVE POWER GaAs FET
=10
V
TIM5964-35SLA
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
45.0
MIN.
-1.0
-42
8.0
-5
Rev. Oct. 2006
TYP. MAX.
45.5
TYP. MAX.
6500
-45
9.0
8.0
8.0
-2.5
39
1.0
20
±0.8
100
9.0
9.0
-4.0
1.3

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TIM5964-35SLA Summary of contents

Page 1

... SYMBOL CONDITIONS 10. GSoff 140mA DSS -420μA GSO GS R Channel to Case th(c-c) TIM5964-35SLA UNIT MIN. TYP. MAX. dBm 45.0 45.5 dB 8.0 9.0 A ⎯ 8.0 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 8.0 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 6500 V -1.0 -2 ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-35SLA SYMBOL ...

Page 3

... RF PERFORMANCE ≅ Pin= 36.5 dBm 5.9 f=6.15 GHz ≅ TIM5964-35SLA Output Power vs. Frequency 6.0 6.1 6.2 6.3 Frequency (GHz) Output Power vs. Input Power Po ηadd 34 36 Pin(dBm ...

Page 4

... Power Dissipation vs. Case Temperature 120 100 IM3 vs. Output Power Characteristics -10 VDS=10V IDS≅ freq.=6.15GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-35SLA 80 120 160 Tc(° 200 38 40 ...

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