TIM5964-35SLA-422 TOSHIBA Semiconductor CORPORATION, TIM5964-35SLA-422 Datasheet
TIM5964-35SLA-422
Manufacturer Part Number
TIM5964-35SLA-422
Description
Microwave Power Gaas Fet
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TIM5964-35SLA-422.pdf
(4 pages)
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Company:
Part Number:
TIM5964-35SLA-422
Manufacturer:
TOSHIBA
Quantity:
5 000
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
n LOW INTERMODULATION DISTORTION
n HIGH POWER
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended gate resistance(Rg) : Rg= 28 (MAX.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
IM3=-45 dBc at Po= 35.0dBm,
Single Carrier Level
P1dB=45.5dBm at 5.85GHz to 6.75GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
I
I
I
th(c-c)
IM
GSoff
DS1
DS2
DSS
gm
GSO
Tch
1dB
1dB
add
G
3
V
I
V
I
V
V
I
Channel to Case
(VDS X IDS + Pin – P1dB)
DS
DS
GS
f
DS
DS
DS
GS
(Single Carrier Level)
= 5.85 to 6.75GHz
= 10.5A
= 140mA
= -420 A
Two-Tone Test
CONDITIONS
CONDITIONS
= 3V
=
=
= 0V
Po=35.0dBm
V
n HIGH GAIN
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
3V
3V
X Rth(c-c)
DS
G1dB=8.0dB(min.) at 5.85GHz to 6.75GHz
MICROWAVE POWER GaAs FET
=10
V
TIM5964-35SLA-422
UNIT
UNIT
dBm
dBc
C/W
mS
dB
dB
%
A
A
V
A
V
C
MIN.
45.0
MIN.
-1.0
-42
8.0
-5
TYP. MAX.
45.5
TYP. MAX.
6500
Rev. Jul. 2006
8.0
-45
8.0
-2.5
39
1.0
20
100
9.0
9.0
-4.0
0.8
1.3
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TIM5964-35SLA-422 Summary of contents
Page 1
... SYMBOL CONDITIONS 10. GSoff 140mA DSS -420 A GSO GS R Channel to Case th(c-c) TIM5964-35SLA-422 UNIT MIN. TYP. MAX. dBm 45.0 45.5 dB 8 dBc -42 -45 A 8.0 C UNIT MIN. TYP. MAX. mS 6500 V -1.0 -2 C/W 1.0 Rev. Jul. 2006 9 ...
Page 2
... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM5964-35SLA-422 SYMBOL ...
Page 3
... GHz TIM5964-35SLA-422 Output Power vs. Frequency Frequency (GHz) Output Power vs. Input Power Po add Pin(dBm ...
Page 4
... TIM5964-35SLA-422 Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics - 6.75GHz f= 5MHz - Po(dBm), Single Carrier Level Tc( C) ...