TIM5964-60SL-422 Toshiba, TIM5964-60SL-422 Datasheet

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TIM5964-60SL-422

Manufacturer Part Number
TIM5964-60SL-422
Description
Manufacturer
Toshiba
Datasheet

Specifications of TIM5964-60SL-422

Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIM5964-60SL-422
Manufacturer:
Transcom
Quantity:
5 000
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
LOW INTERMODULATION DISTORTION
HIGH POWER
IM3=-45 dBc at Pout= 36.5dBm
Single Carrier Level
P1dB=48.0dBm at 5.85GHz to 6.75GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
IM
GSoff
DS1
DS2
DSS
ΔG
gm
GSO
1dB
1dB
add
3
(VDS X IDS + Pin – P1dB)
V
I
V
I
V
V
I
Channel to Case
f = 5.85 to 6.75GHz
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
Two-tone Test
CONDITIONS
CONDITIONS
= 12.0A
= 200mA
Po=36.5dBm
= -1.0mA
I
= 3V
=
=
= 0V
DS
VDS= 10V
X Rth(c-c)
3V
3V
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
set≅9.5A
G1dB=8.0dB at 5.85GHz to 6.75GHz
HIGH GAIN
MICROWAVE POWER GaAs FET
TIM5964-60SL-422
UNIT
UNIT
° C/W
dBm
dBc
dB
dB
° C
%
A
A
S
V
A
V
MIN.
47.0
MIN.
-1.0
-40
7.0
-5
TYP. MAX.
48.0
13.2
TYP. MAX.
-45
8.0
-1.8
Rev. Jul. 2006
40
0.6
20
38
15.0
±0.8
11.8
100
-3.0
0.8

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TIM5964-60SL-422 Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-60SL-422 HIGH GAIN G1dB=8.0dB at 5.85GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED FET ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-60SL-422 SYMBOL ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅13. Pin=40.0dBm 5.6 Output Power(Pout) vs. Input Power(Pin) 51 freq.=6.75GHz 50 V =10V DS I set≅9. TIM5964-60SL-422 5.8 6.0 6.2 6.4 Frequency(GHz) Pout ηadd 37 39 Pin(dBm) 3 6.6 6.8 7 ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 200 100 IM3 vs. Power Characteristics -10 V =10V DS I set≅9.5A DS freq.=6.75GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-60SL-422 80 120 Tc( ° 200 160 40 42 ...

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