TIM5964-30SL Toshiba Semiconductor, TIM5964-30SL Datasheet
TIM5964-30SL
Related parts for TIM5964-30SL
TIM5964-30SL Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-30SL n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET ...
Page 2
... Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (1) (2) 20.4 0.3 24.5 MAX. 16.4 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM5964-30SL SYMBOL stg ...
Page 3
... RF PERFORMANCE Pin= 37 dBm 5.9 Output Power vs. Input Power f=6.4 GHz TIM5964-30SL Output Power vs. Frequency 6.0 6.1 6.2 6.3 Frequency (GHz) Po add 34 36 Pin(dBm) 3 www.DataSheet4U.com 6 ...
Page 4
... Power Dissipation vs. Case Temperature 120 100 IM3 vs. Output Power Characteristics -10 V =10V freq.=6.4GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-30SL 80 120 160 T c (℃ www.DataSheet4U.com 200 40 ...