TIM5964-4SL Toshiba, TIM5964-4SL Datasheet
TIM5964-4SL
Specifications of TIM5964-4SL
Available stocks
Related parts for TIM5964-4SL
TIM5964-4SL Summary of contents
Page 1
... X Rth(c-c) SYMBOL CONDITIONS 1. GSoff 15mA DSS -50μA GSO GS R Channel to Case th(c-c) TIM5964-4SL UNIT MIN. TYP. MAX. dBm 35.5 36.5 dB 8.0 9.0 ⎯ A 1.1 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 1.1 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 900 V -1.0 -2.5 ⎯ ...
Page 2
... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-4SL SYMBOL UNIT ...
Page 3
... RF PERFORMANCE V =10V DS ≅1. Pin=27.5dBm Output Power(Pout) vs. Input Power(Pin) 39 freq.=6.4GHz 38 V =10V DS ≅1. TIM5964-4SL Output Power vs. Frequency 5.9 6.0 6.1 6.2 Frequency (GHz) Pout ηadd 25 27 Pin(dBm) 3 6.3 6 ...
Page 4
... Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics -10 V =10V DS ≅1. freq.=6.4GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-4SL (℃ ...
Page 5
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-4UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
Page 6
... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-4UL SYMBOL ...
Page 7
... RF PERFORMANCE 10V DS ≅ Pin= 26.5dBm 5.7 5 6.15GHz V = 10V ≅ TIM5964-4UL Output Power vs. Frequency 5.9 6 6.1 6.2 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 6.3 6.4 6.5 6 ...
Page 8
... TIM5964-4UL Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics - 10V DS ≅ 6.15GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 Tc (℃ 200 ...