TIM5964-35SLA-251 Toshiba Semiconductor, TIM5964-35SLA-251 Datasheet
TIM5964-35SLA-251
Related parts for TIM5964-35SLA-251
TIM5964-35SLA-251 Summary of contents
Page 1
... MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET TIM5964-35SLA-251 TIM5964-35SLA-251 TIM5964-35SLA-251 TIM5964-35SLA-251 HIGH EFFICIENCY add=39% at 5.9 to 6.75GHz HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE SYMBOL ...
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... C1.0 HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM5964-35SLA-251 SYMBOL ...
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... GHz TIM5964-35SLA-251 Output Power vs. Frequency 6.25 6.25 6.25 6.25 6.50 6.50 6.50 6.50 Frequency (GHz) Po add Pin(dBm) 3 www ...
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... TIM5964-35SLA-251 POWER DISSIPATION vs. CASE TEMPERATURE 120 120 120 120 100 100 100 100 Tc vs. OUTPUT POWER CHARACTERISTICS 3 -10 -10 -10 - 6.325GHz ...