TIM5964-35SLA-251 Toshiba Semiconductor, TIM5964-35SLA-251 Datasheet

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TIM5964-35SLA-251

Manufacturer Part Number
TIM5964-35SLA-251
Description
MICROWAVE POWER GaAs FET
Manufacturer
Toshiba Semiconductor
Datasheet
MICROWAVE SEMICONDUCTOR
MICROWAVE
TECHNICAL DATA
TECHNICAL DATA
FEATURES
FEATURES
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended gate resistance(Rg) : Rg=Rg1(10
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
MICROWAVE
MICROWAVE
TECHNICAL DATA
TECHNICAL DATA
FEATURES
FEATURES
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
LOW INTERMODULATION DISTORTION
HIGH POWER
IM3=-45 dBc at Po= 35.0dBm,
Single Carrier Level
P1dB=45.5dBm at 5.9GHz to 6.75GHz
CHARACTERISTICS
CHARACTERISTICS
SEMICONDUCTOR
SEMICONDUCTOR
SEMICONDUCTOR
SYMBOL
SYMBOL
R
V
V
G
P
I
I
I
IM
th(c-c)
GSoff
gm
DS1
DS2
DSS
Tch
GSO
1dB
1dB
add
G
3
V
I
V
I
V
V
I
Channel to Case
V
DS
DS
GS
(Single Carrier Level)
DS
DS
DS
GS
f
DS
= 5.9 – 6.75GHz
Two Tone Test
= 10.5A
= 140mA
= -
CONDITION
CONDITION
= 3V
=
=
= 0V
Po=35.0dBm
V
X I
3V
3V
DS
BROAD BAND INTERNALLY MATCHED
HIGH GAIN
G1dB=8.5dB at 5.9GHz to 6.75GHz
HERMETICALLY SEALED PACKAGE
HIGH EFFICIENCY
DS
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
add=39% at 5.9 to 6.75GHz
= 10
A
X R
) Rg2(18
TIM5964-35SLA-251
TIM5964-35SLA-251
TIM5964-35SLA-251
TIM5964-35SLA-251
V
th(c-c)
UNIT MIN. TYP. MAX.
)= 28
UNIT MIN. TYP. MAX.
dBm
dBc
mS
C/W
dB
dB
%
A
A
V
A
V
C
(MAX.)
45.0
-1.0
-42
8.0
-5
www.DataSheet4U.com
Revised Aug. 2000
45.5
6500
-45
9.0
8.0
8.0
-2.5
39
1.0
20
100
9.0
9.0
-4.0
0.8
1.3
26

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TIM5964-35SLA-251 Summary of contents

Page 1

... MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET TIM5964-35SLA-251 TIM5964-35SLA-251 TIM5964-35SLA-251 TIM5964-35SLA-251 HIGH EFFICIENCY add=39% at 5.9 to 6.75GHz HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE SYMBOL ...

Page 2

... C1.0 HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM5964-35SLA-251 SYMBOL ...

Page 3

... GHz TIM5964-35SLA-251 Output Power vs. Frequency 6.25 6.25 6.25 6.25 6.50 6.50 6.50 6.50 Frequency (GHz) Po add Pin(dBm) 3 www ...

Page 4

... TIM5964-35SLA-251 POWER DISSIPATION vs. CASE TEMPERATURE 120 120 120 120 100 100 100 100 Tc vs. OUTPUT POWER CHARACTERISTICS 3 -10 -10 -10 - 6.325GHz ...

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