TIM5964-16SL-422 Toshiba, TIM5964-16SL-422 Datasheet

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TIM5964-16SL-422

Manufacturer Part Number
TIM5964-16SL-422
Description
Manufacturer
Toshiba
Datasheet

Specifications of TIM5964-16SL-422

Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
Distortion
Drain Current
Channel Temperature Rise
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
Single Carrier Level
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Recommended Gate Resistance(Rg): 100 Ω (Max.)
LOW INTERMODULATION DISTORTION
HIGH POWER
rd
IM3=-45 dBc at Pout= 31.5dBm
P1dB=42.5dBm at 5.85GHz to 6.75GHz
CHARACTERISTICS
CHARACTERISTICS
Order Intermodulation
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
IDS2
I
I
η
th(c-c)
IM3
GSoff
DS1
DSS
ΔG
gm
GSO
1dB
1dB
add
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
f= 5.85 to 6.75GHz
DS
DS
GS
DS
DS
DS
GS
CONDITIONS
Two-Tone Test
CONDITIONS
= 6A
= 60mA
Po=31.5dBm
= -200μA
= 3V
=
=
= 0V
VDS= 10V
3V
3V
X Rth(c-c)
HIGH GAIN
HERMETICALLY SEALED PACKAGE
G1dB=8.0dB(min.) at 5.85GHz to 6.75GHz
BROAD BAND INTERNALLY MATCHED FET
MICROWAVE POWER GaAs FET
TIM5964-16SL-422
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
41.5
MIN.
-1.0
-42
8.0
-5
TYP. MAX.
42.5
TYP. MAX.
3600
Rev. Oct. 2006
10.5
-45
4.4
4.4
-2.5
35
1.5
±0.8
5.0
5.0
80
-4.0
2.0

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TIM5964-16SL-422 Summary of contents

Page 1

... SYMBOL CONDITIONS GSoff 60mA DSS -200μA GSO GS R Channel to Case th(c-c) TIM5964-16SL-422 UNIT MIN. TYP. MAX. dBm 41.5 42.5 ⎯ dB 8.0 ⎯ A 4.4 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 4.4 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 3600 V -1.0 -2.5 ⎯ ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-16SL-422 SYMBOL ...

Page 3

... RF PERFORMANCE V =10V DS ≅4. Pin=33.5dBm 5.75 Output Power(Pout) vs. Input Power(Pin) 45 freq.=6.3GHz 44 V =10V DS ≅4. TIM5964-16SL-422 Output Power vs. Frequency 6.0 6.25 Frequency (GHz) Pout ηadd 30 32 Pin(dBm) 3 6.5 6. ...

Page 4

... Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics -10 V =10V DS ≅4. freq.=6.3GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-16SL-422 80 120 160 Tc (° 200 34 36 ...

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