TIM5964-45SL Toshiba, TIM5964-45SL Datasheet

TIM5964-45SL

Manufacturer Part Number

TIM5964-45SL

Description

Manufacturer

Toshiba

Datasheet

1.TIM5964-45SL.pdf (4 pages)

Specifications of TIM5964-45SL

Configuration

Single

Gate-source Voltage (max)

Drain-source Volt (max)

15V

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / RoHS Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TIM5964-45SL

Manufacturer:

MICRON

Quantity:

1 001

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MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )

ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

Channel Temperature Rise

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

FEATURES

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Recommended Gate Resistance(Rg) : 28 Ω (Max.)

LOW INTERMODULATION DISTORTION

HIGH POWER

IM3=-45 dBc at Pout= 35.5dBm

Single Carrier Level

P1dB=46.5dBm at 5.9GHz to 6.4GHz

CHARACTERISTICS

SYMBOL

ΔTch

th(c-c)

GSoff

DSS

ΔG

GSO

1dB

add

(VDS X IDS + Pin – P1dB)

Channel to Case

(Single Carrier Level)

f = 5.9 to 6.4GHz

Two-Tone Test

CONDITIONS

= 11.0A

= 170mA

Po=35.5dBm

= -500 μ A

= 3V

= 0V

VDS=10V

X Rth(c-c)

G1dB=9.0dB at 5.9GHz to 6.4GHz

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

HIGH GAIN

MICROWAVE POWER GaAs FET

TIM5964-45SL

UNIT

° C/W

dBm

dBc

° C

MIN.

46.0

MIN.

-1.0

-42

8.0

⎯

-5

TYP. MAX.

46.5

TYP. MAX.

8000

-45

9.0

9.6

-2.5

Rev. Jul. 2006

0.8

⎯

10.8

±0.8

100

-4.0

⎯

1.2

⎯

Related parts for TIM5964-45SL

TIM5964-45SL Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-45SL HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-45SL SYMBOL ...

Page 3

... RF PERFORMANCES Output Power (Pout) vs. Frequency V =10V DS ≅9. Pin=37.5dBm 5.8 Output Power(Pout) vs. Input Power(Pin) 49 freq.=6.4GHz 48 V =10V DS ≅9. TIM5964-45SL 5.9 6.0 6.1 6.2 Frequency (GHz) Pout ηadd 35 37 Pin(dBm) 3 6.3 6.4 6 ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 130 110 IM3 vs. Output Power Characteristics -10 V =10V DS ≅9. freq.=6.4GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-45SL 80 120 Tc( ° 200 160 38 40 ...

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