TIM5964-6UL Toshiba Semiconductor, TIM5964-6UL Datasheet

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TIM5964-6UL

Manufacturer Part Number
TIM5964-6UL
Description
MICROWAVE POWER GaAs FET
Manufacturer
Toshiba Semiconductor
Datasheet

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TIM5964-6UL
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TOSHIBA
Quantity:
5 000
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
before proceeding with design of equipment incorporating this product.
HIGH POWER
P1dB=38.5dBm at 5.9GHz to 6.4GHz
HIGH GAIN
G1dB=10.0dB at 5.9GHz to 6.4GHz
Recommended gate resistance(Rg) : Rg= 150 Ω ( MAX.)
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
I
η
th(c-c)
IM
GSoff
DSS
gm
DS1
DS2
ΔG
GSO
1dB
1dB
add
3
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
(VDS X IDS +Pin-P1dB)
DS
DS
DS
GS
(Single Carrier Level)
f
= 2.0A
= 20mA
= -70 μ A
Two-Tone Test
= 5.9 to 6.4GHz
CONDITIONS
CONDITIONS
= 3V
=
=
Po= 27.5dBm
= 0V
V
3V
3V
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
X Rth(c-c)
DS
MICROWAVE POWER GaAs FET
= 10
TIM5964-6UL
V
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
MIN.
37.5
-1.0
9.0
-44
-5
www.DataSheet4U.com
Rev. Jun. 2006
TYP. MAX.
TYP. MAX.
1240
38.5
10.0
-2.5
-47
1.6
1.6
3.6
3.8
40
±0.6
-4.0
1.9
1.9
4.6
80

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TIM5964-6UL Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-6UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...

Page 2

... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-6UL SYMBOL UNIT ...

Page 3

... V = 10V ≅ TIM5964-6UL Output Power vs. Frequency 6 6.1 6.2 6.3 Frequency (GHz) Output Power vs. Input Power ηadd Pin (dBm) 3 www.DataSheet4U.com 6.4 6.5 6 ...

Page 4

... TIM5964-6UL Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics - 10V DS ≅ 6.15GHz Δ f= 5MHz - Po(dBm), Single Carrier Level 120 160 200 Tc (℃ www.DataSheet4U.com 3 4 ...

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