TIM5964-4SL-422 TOSHIBA Semiconductor CORPORATION, TIM5964-4SL-422 Datasheet

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TIM5964-4SL-422

Manufacturer Part Number
TIM5964-4SL-422
Description
Microwave Power Gaas Fet
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
TIM5964-4SL-422
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TOSHIBA
Quantity:
5 000
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
n LOW INTERMODULATION DISTORTION
n HIGH POWER
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
Distortion
Drain Current
Channel Temperature Rise
Recommended gate resistance(Rg) : Rg= 150
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
rd
IM3=-45 dBc at Po= 25.5dBm
Single Carrier Level
P1dB=36.5dBm at 5.85GHz to 6.75GHz
CHARACTERISTICS
CHARACTERISTICS
Order Intermodulation
SYMBOL
SYMBOL
R
V
V
G
P
IDS2
I
I
th(c-c)
IM3
GSoff
DS1
DSS
gm
GSO
Tch
1dB
1dB
add
G
(VDS X IDS + Pin – P1dB)
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
DS
DS
GS
f= 5.85 to 6.75GHz
DS
DS
DS
GS
Two-Tone Test
CONDITIONS
CONDITIONS
= 1.5A
= 15mA
= -50 A
Po=25.5dBm
= 3V
=
=
= 0V
VDS=10V
n HERMETICALLY SEALED PACKAGE
n HIGH GAIN
n BROAD BAND INTERNALLY MATCHED FET
X Rth(c-c)
3V
3V
G1dB=8.0dB(Min.) at 5.85GHz to 6.75GHz
MICROWAVE POWER GaAs FET
(MAX.)
TIM5964-4SL-422
UNIT
UNIT
dBm
dBc
C/W
mS
dB
dB
%
A
A
V
A
V
C
MIN.
35.5
MIN.
-1.0
-42
8.0
-5
TYP. MAX.
36.5
TYP. MAX.
Rev. Jul. 2006
1.1
-45
1.1
-2.5
900
35
2.6
4.5
1.3
1.3
80
-4.0
0.6
6.5

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TIM5964-4SL-422 Summary of contents

Page 1

... SYMBOL CONDITIONS 1. GSoff 15mA DSS -50 A GSO GS R Channel to Case th(c-c) TIM5964-4SL-422 UNIT MIN. TYP. MAX. dBm 35.5 36.5 dB 8 dBc -42 -45 A 1.1 C UNIT MIN. TYP. MAX. mS 900 V -1.0 -2 C/W 4.5 Rev. Jul. 2006 1 ...

Page 2

... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11D1B) 4-C1.2 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM5964-4SL-422 SYMBOL ...

Page 3

... TIM5964-4SL-422 Output Power vs. Frequency Frequency (GHz Output Power vs ...

Page 4

... TIM5964-4SL-422 Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics ...

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