TIM5964-16UL Toshiba, TIM5964-16UL Datasheet

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TIM5964-16UL

Manufacturer Part Number
TIM5964-16UL
Description
Manufacturer
Toshiba
Datasheet

Specifications of TIM5964-16UL

Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIM5964-16UL
Manufacturer:
TOSHIBA
Quantity:
5 000
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
P1dB=42.5dBm at 5.9GHz to 6.4GHz
G1dB=10.0dB at 5.9GHz to 6.4GHz
Recommended gate resistance(Rg) : Rg= 100 Ω ( MAX.)
 H IGH POWER
HIGH GAIN
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
GSoff
IM
DSS
DS1
DS2
gm
ΔG
GSO
1dB
1dB
add
3
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
GS
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
f
= 6.0A
= 60mA
= -200 μ A
Two-Tone Test
= 5.9 to 6.4GHz
CONDITIONS
= 3V
=
=
CONDITIONS
= 0V
Po= 31.5dBm
IDSset=3.6A
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
V
3V
3V
DS
X Rth(c-c)
MICROWAVE POWER GaAs FET
= 10
TIM5964-16UL
V
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
MIN.
41.5
-1.0
-44
9.0
-5
Rev. Jun. 2009
TYP. MAX.
TYP. MAX.
3600
42.5
10.0
10.5
-2.5
-47
4.4
4.4
1.5
36
±0.6
-4.0
5.0
5.0
1.8
80

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TIM5964-16UL Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-16UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-16UL SYMBOL UNIT ...

Page 3

... RF PERFORMANCE 10V DS ≅ Pin= 32.5dBm 5.7 5.8 5 6.15GHz V = 10V ≅ TIM5964-16UL Output Power vs. Frequency 6 6.1 6.2 Frequency (GHz) Output Power vs. Input Power Pin (dBm) 3 6.3 6.4 6.5 6 ηadd ...

Page 4

... TIM5964-16UL Power Dissipation vs. Case Temperature 100 (℃) IM3 vs. Output Power Characteristics - 10V DS ≅ 6.15GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 200 ...

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