MT57V1MH18E Micron Semiconductor Products, Inc., MT57V1MH18E Datasheet - Page 5

• Manufacturer Part Number: MT57V1MH18E
• Description: 18Mb DDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2.5V V
MT57V1MH18E_16_F.fm – Rev. F, Pub. 3/03
1. Consult Micron Technical Notes for more thorough discussions of clocking schemes.
2. Data capture is possible using only one of the two signals. CQ and CQ# clocks are optional use outputs.
3. For high frequency applications (200 MHz and faster) the CQ and CQ# clocks (for data capture) are recommended
MASTER
ASIC)
over the C and C# clocks (for data alignment). The C and C# clocks are optional use inputs.
BUS
(CPU
or
DD
, HSTL, Pipelined DDRb4 SRAM
SRAM 1 Input CQ#
SRAM 2 Input CQ#
SRAM 1 Input CQ
SRAM 2 Input CQ
Cycle Start#
Delayed K#
Delayed K
Source K#
Source K
Address
R/W#
DQ
R
R = 50Ω
DQ
SA
Figure 3: Application Example
LD#
Vt = V
SRAM 1
R/W#
REF
C C#
2.5V V
K
CQ#
ZQ
CQ
K#
R = 250Ω
5
DD
, HSTL, PIPELINED DDRb4 SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DQ
SA
R
LD#
SRAM 2
Vt
Vt
1 MEG x 18, 512K x 36
R/W#
C C#
K
CQ#
ZQ
CQ
K#
R = 250Ω
©2003 Micron Technology, Inc.