MT57V1MH18E Micron Semiconductor Products, Inc., MT57V1MH18E Datasheet - Page 13

• Manufacturer Part Number: MT57V1MH18E
• Description: 18Mb DDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 13: AC Electrical Characteristics and Recommended Operating Conditions
Notes 16-18; notes appear following parameter tables; 0°C £ T
18Mb: 2.5V V
MT57V1MH18E_16_F.fm – Rev. F, Pub. 3/03
DESCRIPTION
Clock
Clock cycle time (K, K#, C, C#)
Clock HIGH time (K, K#, C, C#)
Clock LOW time (K, K#, C, C#)
Clock to clock# (K­®K#­,
C­®C#­)
Clock# to clock (K#­®K­,
C#­®C­)
Clock to data clock (K­®C­,
K#­®C#­)
Output Times
C, C# HIGH to output valid
C, C# HIGH to output hold
C HIGH to output High-Z
C HIGH to output Low-Z
C, C# HIGH to CQ, CQ# HIGH
CQ, CQ# HIGH to output valid
CQ, CQ# HIGH to output hold
CQ HIGH to output High-Z
CQ HIGH to output Low-Z
Setup Times
Address valid to K rising edge
Control inputs valid to K rising
edge
Data-in valid to K, K# rising edge
Hold Times
K rising edge to address hold
K rising edge to control inputs
hold
K, K# rising edge to data-in hold
DD
, HSTL, Pipelined DDRb4 SRAM
t
t
t
t
t
CQHQX1
t
t
t
CQHQV
CQHQX
CHCQH
CQHQZ
t
KHK#H
K#HKH
t
t
t
t
CHQX1
t
t
t
t
t
t
t
t
KHKH
CHQV
CHQX
DVKH
KHAX
KHDX
SYM
KHCH
CHQZ
AVKH
KHKL
KLKH
IVKH
KHIX
-0.35
-0.35
MIN
5.0
2.0
2.0
2.4
2.4
0.0
0.8
0.8
0.8
0.6
0.6
0.6
0.6
0.6
0.6
2.5V V
-5
MAX
0.35
0.35
1.5
2.4
2.4
2.6
13
A
DD
£ +70°C; T
, HSTL, PIPELINED DDRb4 SRAM
-0.40
-0.40
MIN
6.0
2.4
2.4
2.8
2.8
0.0
0.8
0.8
0.8
0.7
0.7
0.7
0.7
0.7
0.7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-6
J
£ +95°C; V
MAX
0.40
0.40
2.0
3.0
3.0
3.2
1 MEG x 18, 512K x 36
DD
-0.45
-0.45
MIN
7.5
3.0
3.0
3.4
3.4
0.0
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
= 2.5V ±0.1V
-7.5
MAX
0.45
0.45
2.5
3.6
3.6
3.8
UNITS
©2003 Micron Technology, Inc.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
13, 19
13, 19
18
20
20
20
20
20
20
19
19