DF2211NP24V Renesas Technology / Hitachi Semiconductor, DF2211NP24V Datasheet - Page 203
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DF2211NP24V
Manufacturer Part Number
DF2211NP24V
Description
H8S/2200 Series, 2212 Group, USB, RTC, HSS TNP-64B; Vcc= 2.7 to 3.6 volts, Temp= -20 to 75 C; Package: PVQN0064LB-A
Manufacturer
Renesas Technology / Hitachi Semiconductor
Datasheet
1.DF2211NP24V.pdf
(756 pages)
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6.7.2
As with the basic bus interface, either program wait insertion or pin wait insertion using the WAIT
pin can be used in the initial cycle (full access) of the burst ROM interface. See section 6.6.4, Wait
Control.
Wait states cannot be inserted in a burst cycle.
6.8
When the H8S/2218 Group accesses external space, it can insert a 1-state idle cycle (T
bus cycles in the following two cases: (1) when read accesses between different areas occur
consecutively, and (2) when a write cycle occurs immediately after a read cycle. By inserting an
idle cycle it is possible, for example, to avoid data collisions between ROM, with a long output
floating time, and high-speed memory, I/O interfaces, and so on.
Consecutive Reads between Different Areas: If consecutive reads between different areas occur
while the ICIS1 bit in BCRH is set to 1, an idle cycle is inserted at the start of the second read
cycle.
Figure 6.22 shows an example of the operation in this case. In this example, bus cycle A is a read
cycle from ROM with a long output floating time, and bus cycle B is a read cycle from SRAM,
each being located in a different area. In (a), an idle cycle is not inserted, and a collision occurs in
cycle B between the read data from ROM and that from SRAM. In (b), an idle cycle is inserted,
and a data collision is prevented.
Wait Control
Idle Cycle
Rev.7.00 Dec. 24, 2008 Page 149 of 698
REJ09B0074-0700
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