ST7LITE49K2 STMicroelectronics, ST7LITE49K2 Datasheet - Page 212

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ST7LITE49K2

Manufacturer Part Number
ST7LITE49K2
Description
8-bit MCU
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST7LITE49K2

8 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection In-circuit Programming And In-application Programming (icp And Iap) Endurance
10K write/erase cycles guaranteed Data retention
256 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention
20 years at 55 °C.
Clock Sources
Internal trimmable 8 MHz RC oscillator, auto-wakeup internal low power - low frequency oscillator, crystal/ceramic resonator or external clock
Five Power Saving Modes
Halt, Active-halt, Auto-wakeup from Halt, Wait and Slow

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Electrical characteristics
13.8
13.8.1
212/245
EMC (electromagnetic compatibility) characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling two LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Table 92.
Symbol
V
V
FESD
FFTB
ESD: Electrostatic Discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
conforms with the IEC 1000-4-4 standard.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Prequalification trials
Most of the common failures (unexpected reset and Program Counter corruption) can
be reproduced by manually forcing a low state on the RESET pin or the Oscillator pins
for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can
be hardened to prevent unrecoverable errors occurring (see application note AN1015).
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test
Corrupted Program Counter
Unexpected reset
Critical Data corruption (control registers...)
Voltage limits to be applied on any I/O pin
applied through 100pF on V
Fast transient voltage burst limits to be
pins to induce a functional disturbance
EMS test results
to induce a functional disturbance
Parameter
DD
and V
SS
package,T
V
conforms to IEC 1000-4-2
conforms to IEC 1000-4-4
DD
T
A
=+25 °C, f
=5 V, SDIP32 package,
V
DD
A
Conditions
=+25 °C, f
=5 V, SDIP32
OSC
=8 MHz
OSC
=8 MHz
ST7LITE49K2
DD
and
Level/
Class
2B
3B

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