AT32UC3C1512C Atmel Corporation, AT32UC3C1512C Datasheet - Page 352
AT32UC3C1512C
Manufacturer Part Number
AT32UC3C1512C
Description
Manufacturer
Atmel Corporation
Datasheets
1.AT32UC3A0128.pdf
(377 pages)
2.AT32UC3A0128.pdf
(159 pages)
3.AT32UC3C0128C.pdf
(1313 pages)
4.AT32UC3C0128C.pdf
(108 pages)
Specifications of AT32UC3C1512C
Flash (kbytes)
512 Kbytes
Pin Count
100
Max. Operating Frequency
66 MHz
Cpu
32-bit AVR
# Of Touch Channels
32
Hardware Qtouch Acquisition
No
Max I/o Pins
81
Ext Interrupts
100
Usb Transceiver
1
Quadrature Decoder Channels
2
Usb Speed
Full Speed
Usb Interface
Device + OTG
Spi
7
Twi (i2c)
3
Uart
5
Can
2
Lin
5
Ssc
1
Ethernet
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
2000
Analog Comparators
4
Resistive Touch Screen
No
Dac Channels
4
Dac Resolution (bits)
12
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
68
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
3.0 to 3.6 or 4.5 to 5.5
Operating Voltage (vcc)
3.0 to 3.6 or 4.5 to 5.5
Fpu
Yes
Mpu / Mmu
Yes / No
Timers
6
Output Compare Channels
22
Input Capture Channels
12
Pwm Channels
19
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
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- AT32UC3A0128 PDF datasheet
- AT32UC3A0128 PDF datasheet #2
- AT32UC3C0128C PDF datasheet #3
- AT32UC3C0128C PDF datasheet #4
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- Download datasheet (20Mb)
Figure 19-3. SDRAM Device Initialization Sequence
19.7.2
32117C–AVR-08/11
SDRAMC_A[12:11]
SDRAMC_A[9:0]
SDCKE
SDWE
SDCK
SDCS
RAS
CAS
DQM
SDRAM Controller Write Cycle
A10
Inputs Stable for
200 usec
After initialization, the SDRAM devices are fully functional.
The SDRAMC allows burst access or single access. In both cases, the SDRAMC keeps track of
the active row in each bank, thus maximizing performance. To initiate a burst access, the
SDRAMC uses the transfer type signal provided by the master requesting the access. If the next
access is a sequential write access, writing to the SDRAM device is carried out. If the next
access is a write-sequential access, but the current access is to a boundary page, or if the next
access is in another row, then the SDRAMC generates a precharge command, activates the
new row and initiates a write command. To comply with SDRAM timing parameters, additional
clock cycles are inserted between precharge and active (t
and write (t
19.8.3. This is described in
Precharge All Banks
quency, the TR register must be written with the value 1562 (15.625 µs x 100 MHz) or
781 (7.81 µs x 100 MHz).
RCD
) commands. For definition of these timing parameters, refer to the
t
RP
1st Auto Refresh
Figure 19-4 on page
8th Auto Refresh
353.
t
RC
RP
) commands and between active
LMR Command
AT32UC3C
t
MRD
Valid Command
Section
352
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