AT32UC3A464 Atmel Corporation, AT32UC3A464 Datasheet - Page 222

• Manufacturer Part Number: AT32UC3A464
• Manufacturer: Atmel Corporation

Specifications of AT32UC3A464

• Flash (kbytes): 64 Kbytes
• Pin Count: 100
• Max. Operating Frequency: 66 MHz
• Cpu: 32-bit AVR
• Hardware Qtouch Acquisition: No
• Usb Transceiver: 1
• Usb Speed: Hi-Speed
• Usb Interface: Device + OTG
• Spi: 6
• Twi (i2c): 2
• Uart: 4
• Ssc: 1
• Sd / Emmc: 2
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 128
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: Yes
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 3.0 to 3.6
• Operating Voltage (vcc): 3.0 to 3.6
• Fpu: No
• Timers: 6
• Output Compare Channels: 6
• Input Capture Channels: 6
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

16.6.3
16.6.4
16.7
16.7.1
32072G–11/2011
Functional Description
Clocks
Interrupts
SDRAM Device Initialization
The clock for the SDRAMC bus interface (CLK_SDRAMC) is generated by the Power Manager.
This clock is enabled at reset, and can be disabled in the Power Manager. It is recommended to
disable the SDRAMC before disabling the clock, to avoid freezing the SDRAMC in an undefined
state.
The SDRAMC interrupt request line is connected to the interrupt controller. Using the SDRAMC
interrupt requires the interrupt controller to be programmed first.
The initialization sequence is generated by software. The SDRAM devices are initialized by the
following sequence:
1. SDRAM features must be defined in the CR register by writing the following fields with
2. For mobile SDRAM devices, Temperature Compensated Self Refresh (TCSR), Drive
3. The Memory Device Type field must be defined in the Memory Device Register
4. A No Operation (NOP) command must be issued to the SDRAM devices to start the
5. A minimum pause of 200µs is provided to precede any signal toggle.
6. An All Banks Precharge command must be issued to the SDRAM devices. The user
7. Eight Auto Refresh commands are provided. The user must write the value four to the
8. A Load Mode Register command must be issued to program the parameters of the
9. For mobile SDRAM initialization, an Extended Load Mode Register command must be
10. The user must go into Normal Mode, writing the value 0 to the MR.MODE field and per-
11. Write the refresh rate into the Refresh Timer Count field in the Refresh Timer Register
the desired value: asynchronous timings (TXSR, TRAS, TRCD, TRP, TRC, and TWR),
Number of Columns (NC), Number of Rows (NR), Number of Banks (NB), CAS Latency
(CAS), and the Data Bus Width (DBW).
Strength (DS) and Partial Array Self Refresh (PASR) fields must be defined in the Low
Power Register (LPR).
(MDR.MD).
SDRAM clock. The user must write the value one to the Command Mode field in the
SDRAMC Mode Register (MR.MODE) and perform a write access to any SDRAM
address.
must write the value two to the MR.MODE field and perform a write access to any
SDRAM address.
MR.MODE field and performs a write access to any SDRAM location eight times.
SDRAM devices in its Mode Register, in particular CAS latency, burst type, and burst
length. The user must write the value three to the MR.MODE field and perform a write
access to the SDRAM. The write address must be chosen so that BA[1:0] are set to
zero. See
issued to program the SDRAM devices parameters (TCSR, PASR, DS). The user must
write the value five to the MR.MODE field and perform a write access to the SDRAM.
The write address must be chosen so that BA[1] or BA[0] are equal to one. See
16.8.1
forming a write access at any location in the SDRAM.
(TR.COUNT). The refresh rate is the delay between two successive refresh cycles. The
SDRAM device requires a refresh every 15.625µs or 7.81µs. With a 100MHz fre-
for details about Extended Load Mode Register command.
Section 16.8.1
for details about Load Mode Register command.
Section
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