NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 8

• Manufacturer Part Number: NAND01GW3B2BN6E
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BN6E

• Memory Type: Flash
• Memory Size: 1GB
• Access Time: 25µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Interface: Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Description
Table 2.
1. x16 organization only available for MCP.
Figure 1.
8/60
Reference
NAND01G
NAND02G
-B2C
-B2B
NAND01GW3B2B
NAND01GW4B2B
NAND02GW3B2C
NAND02GW4B2C
NAND02GR3B2C
NAND02GR4B2C
NAND01GR3B2B
NAND01GR4B2B
WP
CL
AL
W
Part number
E
R
Product description
Logic block diagram
Command register
register/counter
Command
interface
Address
Density
2Gbits
1Gbit
logic
width
Bus
x16
x16
x8
x8
words
words
Page
bytes
bytes
2048
1024
2048
1024
size
+64
+32
+64
+32
RB
P/E/R controller,
Block
words
words
high voltage
bytes
bytes
128K
64K+
128K
64K+
size
+4K
+4K
2K
2K
generator
Memory
pages x
pages x
blocks
blocks
array
1024
2048
64
64
Operating
voltage
1.95 V
1.95 V
1.95 V
1.95 V
1.7 to
2.7 to
1.7 to
2.7 to
1.7 to
2.7 to
1.7 to
2.7 to
3.6 V
3.6 V
3.6 V
3.6 V
I/O buffers & latches
Random
access
(max)
I/O0-I/O7, x8/x16
25 µs
25 µs
25 µs
25 µs
25 µs
25 µs
25 µs
25 µs
time
I/O8-I/O15, x16
Cache register
Page buffer
Y decoder
memory array
NAND01G-B2B, NAND02G-B2C
NAND flash
Sequential
access
(min)
50 ns
30 ns
50 ns
30 ns
50 ns
30 ns
50 ns
30 ns
time
Timings
Progra
m time
200 µs
Page
(typ)
erase
Bloc
(typ)
2 ms
2 ms
k
9 x 11 mm
9.5 x 12 m
VFBGA63
VFBGA63
Package
TSOP48
TSOP48
AI12799
(1)
(1)
(1)
(1)
m