NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 39

• Manufacturer Part Number: NAND01GW3B2BN6E
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BN6E

• Memory Type: Flash
• Memory Size: 1GB
• Access Time: 25µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Interface: Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND01G-B2B, NAND02G-B2C
9
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Table 18.
Page program time
Block erase time
Program/erase cycles per block (with ECC)
Data retention
Table
18.
Program, erase times and program erase endurance cycles
Parameters
Program and erase times and endurance cycles
100 000
Min
10
NAND flash
Typ
200
2
Max
700
3
cycles
years
Unit
ms
µs
39/60