NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 44

• Manufacturer Part Number: NAND01GW3B2BN6E
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BN6E

• Memory Type: Flash
• Memory Size: 1GB
• Access Time: 25µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Interface: Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
Table 24.
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Symbol
t
t
t
t
t
t
t
t
t
t
t
t
ALHWH
CLHWH
t
WHALH
WHCLH
t
t
WHALL
WHCLL
ALLWH
CLLWH
WHWL
WHDX
WHEH
WLWH
DVWH
WLWL
ELWH
symbol
t
t
t
t
Alt.
t
t
t
t
t
CLS
t
t
ALH
CLH
ALS
WH
WC
WP
DS
CS
DH
CH
AC characteristics for command, address, data input
Address Latch Low to Write Enable High
Address Latch High to Write Enable High
Command Latch High to Write Enable
High
Command Latch Low to Write Enable
High
Data Valid to Write Enable High
Chip Enable Low to Write Enable High
Write Enable High to Address Latch High
Write Enable High to Address Latch Low
Write Enable High to Command Latch
High
Write Enable High to Command Latch
Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
Parameter
AL setup time
CL setup time
Data setup time
E setup time
AL hold time
AL hold time
CL hold time
Data hold time
E hold time
W High hold time Min
W pulse width
Write cycle time
NAND01G-B2B, NAND02G-B2C
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
devices
1.8 V
25
25
20
35
10
10
10
10
15
25
45
devices
3 V
15
15
15
20
10
15
30
5
5
5
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns