NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 36

• Manufacturer Part Number: NAND01GW3B2BN6E
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BN6E

• Memory Type: Flash
• Memory Size: 1GB
• Access Time: 25µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Interface: Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Software algorithms
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Table 17.
Figure 15. Bad block management flowchart
Figure 16. Garbage collection
Operation
Invalid
Program
Valid
NAND flash failure modes
page
page
Erase
Read
Old area
Block Address =
START
Block 0
= FFh?
block?
Data
Last
END
YES
YES
NO
NO
(erased)
Free
page
Bad Block table
Block replacement or ECC
Update
Block Address
Increment
Block replacement
New area (after GC)
Procedure
NAND01G-B2B, NAND02G-B2C
ECC
AI07588C
AI07599B