NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 40

IC, FLASH, 1GB, 25µS, TSOP-48

NAND01GW3B2BN6E

Manufacturer Part Number
NAND01GW3B2BN6E
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Datasheets

Specifications of NAND01GW3B2BN6E

Memory Type
Flash
Memory Size
1GB
Access Time
25µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Interface
Serial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GW3B2BN6E
Manufacturer:
ST
0
Part Number:
NAND01GW3B2BN6E
Manufacturer:
ST
Quantity:
20 000
Part Number:
NAND01GW3B2BN6E
Quantity:
650
Maximum ratings
10
40/60
Maximum ratings
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 19.
1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V
Symbol
T
V
T
V
BIAS
IO
STG
DD
(1)
Absolute maximum ratings
Temperature under bias
Storage temperature
Input or output voltage
Supply voltage
Parameter
DD
+ 2 V for less than 20 ns during transitions on I/O pins.
1.8 V devices
1.8 V devices
3 V devices
3 V devices
Table 19: Absolute maximum
NAND01G-B2B, NAND02G-B2C
– 0.6
– 0.6
– 0.6
– 0.6
– 50
– 65
Min
Value
Max
125
150
2.7
4.6
2.7
4.6
ratings, may
Unit
°C
°C
V
V
V
V

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