NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 57
NAND01GW3B2BN6E
Manufacturer Part Number
NAND01GW3B2BN6E
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Specifications of NAND01GW3B2BN6E
Memory Type
Flash
Memory Size
1GB
Access Time
25µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Interface
Serial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GW3B2BN6E
Manufacturer:
ST
Quantity:
20 000
NAND01G-B2B, NAND02G-B2C
Figure 37. VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline
1. Drawing is not to scale
Table 28.
Symbol
FD1
FE1
ddd
SD
D1
D2
FD
FE
SE
A1
A2
E1
E2
A
D
E
b
e
VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package mechanical data
E
E2
11.00
0.45
9.00
4.00
7.20
5.60
8.80
0.80
2.50
0.90
2.70
1.10
0.40
0.40
Typ
BALL "A1"
FD1
E1
A
millimeters
e
10.90
0.25
0.40
8.90
Min
–
–
–
SD
D2
D1
D
FD
11.10
Max
1.05
0.70
0.50
9.10
0.10
A1
–
–
–
e
SE
b
FE1
A2
FE
0.018
0.354
0.157
0.283
0.433
0.220
0.346
0.031
0.098
0.035
0.106
0.043
0.016
0.016
Typ
BGA-Z75
inches
0.010
0.016
0.350
0.429
ddd
Package mechanical
Min
–
–
–
0.041
0.028
0.020
0.358
0.004
0.437
Max
–
–
–
57/60