NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 13

• Manufacturer Part Number: NAND01GW3B2BN6E
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BN6E

• Memory Type: Flash
• Memory Size: 1GB
• Access Time: 25µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Interface: Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND01G-B2B, NAND02G-B2C
Figure 5.
Block
Page
Memory array organization
2048 bytes
Main area
Page buffer, 2112 bytes
2,048 bytes
Block = 64 pages
Page = 2112 bytes (2,048 + 64)
x8 DEVICES
bytes
bytes
64
64
8 bits
8 bits
Block
Page
1024 words
1,024 words
Main area
Page buffer, 1056 words
Block = 64 pages
Page = 1056 words (1024 + 32)
x16 DEVICES
Memory array organization
words
words
32
32
16 bits
16 bits
AI09854
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