NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 48

IC, FLASH, 1GB, 25µS, TSOP-48

NAND01GW3B2BN6E

Manufacturer Part Number
NAND01GW3B2BN6E
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Datasheets

Specifications of NAND01GW3B2BN6E

Memory Type
Flash
Memory Size
1GB
Access Time
25µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Interface
Serial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Quantity
Price
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DC and AC parameters
Figure 23. Read status register AC waveforms
Figure 24. Read electronic signature AC waveforms
1. Refer to
48/60
contained in byte 3 and 4.
I/O
CL
AL
CL
I/O
W
W
E
R
E
R
Table 14
for the values of the manufacturer and device codes, and to
Read Electronic
90h
Command
Signature
tCLHWH
(Data Setup time)
tELWH
tDVWH
1st Cycle
Address
tALLRL1
00h
(Read ES Access time)
70h
tRLQV
tWLWH
(Data Hold time)
tWHDX
tWHCLL
tWHEH
tDZRL
Byte1
Man.
code
tWHRL
tCLLRL
tRLQV
Device
code
tELQV
Byte2
Table 15
NAND01G-B2B, NAND02G-B2C
Byte3
00h
Status Register
and
tEHQZ
tRHQZ
Output
Table 16
see Note.1
Byte4
for the information
ai13108
ai08667

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