NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 21
NAND01GW3B2BN6E
Manufacturer Part Number
NAND01GW3B2BN6E
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Specifications of NAND01GW3B2BN6E
Memory Type
Flash
Memory Size
1GB
Access Time
25µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Interface
Serial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GW3B2BN6E
Manufacturer:
ST
Quantity:
20 000
NAND01G-B2B, NAND02G-B2C
Figure 6.
1. Highest address depends on device density.
RB
I/O
CL
AL
W
R
E
Read operations
Command
code
00h
Address input
tBLBH1
Command
code
30h
Busy
Data output (sequentially)
Device operations
ai08657b
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