UPD70F3714GC-8BS-A Renesas Electronics America, UPD70F3714GC-8BS-A Datasheet - Page 650

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UPD70F3714GC-8BS-A

Manufacturer Part Number
UPD70F3714GC-8BS-A
Description
MCU 32BIT V850ES/LX2 64-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Ix2r
Datasheet

Specifications of UPD70F3714GC-8BS-A

Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, UART/USART
Peripherals
LVD, PWM, WDT
Number Of I /o
39
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD70F3714GC-8BS-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
RAM Retention Voltage Detection
(T
648
Detection voltage
Supply voltage rise time
Response time 1
Minimum V
A
Note Time required to set the RAMS.RAMF bit to 1 after the detection voltage is detected.
= −40 to +85°C, V
Detection voltage (MAX.)
Detection voltage (TYP.)
Detection voltage (MIN.)
Supply voltage (MIN.)
Supply voltage (V
DD
Parameter
width
Note
DD
= EV
DD
)
DD
= 3.5 to 5.5 V, V
<30>
CHAPTER 19 ELECTRICAL SPECIFICATIONS
t
t
t
V
RAMHTH
RAMHW
RAMHD
RAMH
Symbol
<31>
User’s Manual U17716EJ2V0UD
<30>
<31>
<32>
SS
= EV
V
After V
DD
SS
= 0 to 3.5 V
= 0 V, C
DD
Conditions
reaches 2.1 V
L
= 50 pF)
0.002
<32>
MIN.
1.9
0.2
TYP.
2.0
0.2
<31>
MAX.
1800
2.1
2.0
Time
Unit
ms
ms
ms
V

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