UPD70F3714GC-8BS-A Renesas Electronics America, UPD70F3714GC-8BS-A Datasheet - Page 611

• Manufacturer Part Number: UPD70F3714GC-8BS-A
• Description: MCU 32BIT V850ES/LX2 64-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Ix2r

Specifications of UPD70F3714GC-8BS-A

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 20MHz
• Connectivity: CSI, UART/USART
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 6K x 8
• Voltage - Supply (vcc/vdd): 3.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.3 Functional Overview
memory programmer, regardless of whether the V850ES/IE2 has already been mounted on the target system or not
(on-board/off-board programming).
supported, so that the program cannot be changed by an unauthorized person.
where it is assumed that the program is changed after production/shipment of the target system. A boot swap function
(
is supported during self programming, so that the flash memory can be rewritten under various conditions, such as
while communicating with an external device.
μ
On-board programming
Off-board programming
Self programming
(
PD70F3714 only) that rewrites the entire flash memory area safely is also supported. In addition, interrupt servicing
μ
The internal flash memory of the V850ES/IE2 can be rewritten by using the rewrite function of the dedicated flash
In addition, a security function that prohibits rewriting the user program written to the internal flash memory is also
The rewrite function using the user program (self programming (
Remark
PD70F3714 only)
Rewrite Method
The FA series is a product of Naito Densei Machida Mfg. Co., Ltd.
Flash memory can be rewritten after the device is mounted on the
target system, by using a dedicated flash memory programmer.
Flash memory can be rewritten before the device is mounted on the
target system, by using a dedicated flash memory programmer and a
dedicated program adapter board (FA series).
Flash memory can be rewritten by executing a user program that has
been written to the flash memory in advance by means of on-board/off-
board programming. (During self-programming, instructions cannot be
fetched from or data access cannot be made to the internal flash
memory area. Therefore, the rewrite program must be transferred to
the internal RAM or external memory in advance).
CHAPTER 18 FLASH MEMORY
Table 18-1. Rewrite Method
User’s Manual U17716EJ2V0UD
Functional Outline
μ
PD70F3714 only)) is ideal for an application
Flash memory
programming mode
Normal operation mode
Operation Mode
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