M30835FJGP#U5 Renesas Electronics America, M30835FJGP#U5 Datasheet - Page 472

• Manufacturer Part Number: M30835FJGP#U5
• Description: IC M32C/83 MCU FLASH 144LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M32C/80r

Specifications of M30835FJGP#U5

• Core Processor: M32C/80
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: CAN, I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 121
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 31K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 34x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 144-LQFP
• For Use With: R0K330879S001BE - KIT DEV RSK M32C/87R0K330879S000BE - KIT DEV RSK M32C/87
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R
R
M
e
E
3
. v
J
Figure 26.12 V
2
0
C
1
9
3 .
B
8 /
0
1
3
0
Memory Expansion Mode and Microprocessor Mode
(with a wait state, when accessing an external memory and using the multiplexed bus)
CSi
ADi
/DBi
ADi
BHE
RD
CSi
ADi
/DBi
ADi
BHE
WR,WRL,
WRH
BCLK
ALE
BCLK
ALE
3
J
G
Read Timing
Write Timing
4
a
NOTES:
0 -
o r
n
3 .
1. Varies with operation frequency.
1
u
, 1
3
p
NOTES:
t
t
t
t
(m=3 with 2 wait states and m=5 with 3 wait states)
1
d(AD-ALE)
h(ALE-AD)
h(WR-CS)
d(DB-WR)
(
2
M
0
1. Varies with operation frequency.
CC
0
3
18ns.max
t
6
d(BCLK-ALE)
t
t
t
t
t
2
18ns.max
d(AD-ALE)
h(ALE-AD)
ac3(RD-DB)
ac3(AD-DB)
=3.3V Timing Diagram (3)
d(BCLK-ALE)
t
C
d(AD-ALE)
=(tcyc/2-10)ns.min, t
=(tcyc/2 x m-25)ns.min
t
=(tcyc/2-20)ns.min
=(tcyc/2-10)ns.min, t
d(BCLK-CS)
8 /
18ns.max
Page 447
t
t
t
t
18ns.max
18ns.max
d(BCLK-AD)
d(AD-ALE)
18ns.max
d(BCLK-CS)
d(BCLK-AD)
, 3
t
ac3(AD-DB)
=(tcyc/2-20)ns.min
=(tcyc/2-10)ns.min, t
M
=(tcyc/2 x m-35)ns.max (m=3 with 2 wait states and m=5 with 3 wait states)
=(tcyc/2 x n-35)ns.max (n=5 with 2 wait states and n=7 with 3 wait states)
3
(1)
Address
Address
2
(1)
C
f o
t
8 /
h(BCLK-ALE)
t
(1)
-2ns.min
t
4
h(BCLK-ALE)
t
-2ns.min
h(ALE-AD)
3
h(ALE-AD)
8
) T
8
h(WR-DB)
h(WR-AD)
(1)
(1)
t
t
h(RD-AD)
d(BCLK-WR)
d(BCLK-RD)
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
18ns.max
18ns.max
t
dz(RD-AD)
8ns.max
=(tcyc/2-10)ns.min, t
tcyc
tcyc
t
ac3(RD-DB)
t
d(DB-WR)
(1)
Measurement Conditions:
(1)
• V
• Input high and low voltage:
• Output high and low voltage:
t
Data output
h(BCLK-WR)
h(RD-CS)
t
h(BCLK-RD)
-3ns.min
t
CC
0ns.min
su(DB-BCLK)
V
V
=3.0 to 3.6V
IH
OH
Data input
=1.5V, V
30ns.min
=(tcyc/2-10)ns.min
=1.5V, V
t
h(WR-CS)
t
t
IL
h(WR-DB)
h(RD-CS)
t
OL
t
=0.5V
h(RD-AD)
h(WR-AD)
t
=1.5V
h(RD-DB)
0ns.min
26. Electrical Characteristics
(1)
(1)
(1)
(1)
()
t
h(BCLK-AD)
Vcc=3.3V
t
t
0ns.min
0ns.min
t
0ns.min
h(BCLK-CS)
h(BCLK-CS)
0ns.min
h(BCLK-AD)
Address
Address