HD6413003TF16V Renesas Electronics America, HD6413003TF16V Datasheet - Page 33

MCU 5V 0K PB-FREE 112-QFP

HD6413003TF16V

Manufacturer Part Number
HD6413003TF16V
Description
MCU 5V 0K PB-FREE 112-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD6413003TF16V

Core Size
16-Bit
Oscillator Type
Internal
Core Processor
H8/300H
Speed
16MHz
Connectivity
SCI
Peripherals
DMA, PWM, WDT
Number Of I /o
50
Program Memory Type
ROMless
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Operating Temperature
-20°C ~ 75°C
Package / Case
112-QFP
No. Of I/o's
58
Ram Memory Size
512Byte
Cpu Speed
16MHz
No. Of Timers
11
No. Of Pwm Channels
4
Digital Ic Case Style
QFP
Supply Voltage
RoHS Compliant
Controller Family/series
H8/300H
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6413003TF16V
Manufacturer:
ITT
Quantity:
12 000
Part Number:
HD6413003TF16V
Manufacturer:
RENESAS
Quantity:
36
Part Number:
HD6413003TF16V
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Table 1-3 Pin Functions (cont)
Type
Refresh
controller
DMA
controller
(DMAC)
16-bit
integrated
time unit
(ITU)
Symbol
RFSH
CS
RD
HWR
LWR
DREQ
DREQ
TEND
TEND
TCLKD to
TCLKA
TIOCA
TIOCA
TIOCB
TIOCB
TOCXA
TOCXB
3
3
0
3
0
4
0
4
0
to
4
4
to
to
to
Pin No.
QFP-112
100
101
78
79
80
16, 14
9, 8
15, 13,
106, 105
108 to 105 Input
4, 2, 111,
109, 107
5, 3, 112,
110, 108
6
7
I/O
Output Refresh: Indicates a refresh cycle
Output Row address strobe
Output Column address strobe CAS: Column
Output Upper write: Write enable signal for DRAM
Output Lower write: Write enable signal for DRAM
Input
Output Transfer end 3 to 0: These signals indicate
Input/
output
Input/
output
Output Output compare XA4: PWM output
Output Output compare XB4: PWM output
13
Name and Function
strobe signal for DRAM connected to area 3
address strobe signal for bit DRAM connected
to area 3; used with 2WE DRAM.
Write enable: Write enable signal for DRAM
connected to area 3; used with 2CAS DRAM.
connected to area 3; used with 2WE DRAM.
Upper column address strobe: Column
address strobe signal for DRAM connected to
area 3; used with 2CAS DRAM.
connected to area 3; used with 2WE DRAM.
Lower column address strobe: Column
address strobe signal for DRAM connected to
area 3; used with 2CAS DRAM.
DMA request 3 to 0: DMAC activation
requests
that the DMAC has ended a data transfer
Clock input A to D: External clock inputs
Input capture/output compare A4 to A0:
GRA4 to GRA0 output compare or input
capture, or PWM output
Input capture/output compare B4 to B0:
GRB4 to GRB0 output compare or input
capture, or PWM output
RAS: Row address

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