MPC5125YVN400 Freescale Semiconductor, MPC5125YVN400 Datasheet - Page 42

• Manufacturer Part Number: MPC5125YVN400
• Description: IC MCU 32BIT E300 324TEPBGA
• Manufacturer: Freescale Semiconductor
• Series: MPC51xxr

Specifications of MPC5125YVN400

• Core Processor: e300
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I²C, USB OTG
• Peripherals: DMA, WDT
• Number Of I /o: 64
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.33 V ~ 1.47 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 324-PBGA
• Processor Series: MPC51xx
• Core: e300
• Data Bus Width: 32 bit
• Development Tools By Supplier: TWR-MPC5125-KIT, TWR-SER, TWR-ELEV, TOWER
• Maximum Clock Frequency: 400 MHz
• Operating Supply Voltage: 1.4 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Data Ram Size: 32 KB
• I/o Voltage: 3.3 V
• Interface Type: CAN, I2C
• Minimum Operating Temperature: - 40 C
• Program Memory Size: 32 bit
• Cpu Speed: 400MHz
• Embedded Interface Type: CAN, I2C, SPI, UART, USB
• Digital Ic Case Style: TEPBGA
• No. Of Pins: 324
• Rohs Compliant: Yes
• Cpu Family: MPC5xx
• Device Core Size: 32b
• Frequency (max): 400MHz
• Total Internal Ram Size: 32KB
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 324
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical and Thermal Characteristics
4.1.6
NOTES:
1
2
3
4
5
4.1.6.1
An estimation of the chip-junction temperature, T
where:
42
Thermal resistance junction-to-ambient natural
convection
Thermal resistance junction-to-ambient natural
convection
Thermal resistance junction-to-moving-air ambient
Thermal resistance junction-to-moving-air ambient
Thermal resistance junction-to-board
Thermal resistance junction-to-case
Junction-to-package-top natural convection
Thermal characteristics are targets based on simulation that are subject to change per device characterization.
Junction-to-Ambient thermal resistance determined per JEDEC JESD51-3 and JESD51-6. Thermal test board meets JEDEC
specification for this package.
Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board meets JEDEC specification for
the specified package.
Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is used
for the case temperature. Reported value includes the thermal resistance of the interface layer.
Thermal characterization parameter indicating the temperature difference between the package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as
Psi-JT.
3
4
5
6
T
R
P
A
D
θJA
2
2
Doze, Nap, and Sleep power are measured with the e300 core in Doze/Nap/Sleep mode; the system
oscillator, system PLL, and core PLL active; and all other system modules inactive.
Deep-sleep power is measured with the e300 core in Sleep mode. The system oscillator, system PLL, core
PLL, and other system modules are inactive.
PLL power is measured at AV
Unloaded typical I/O power is measured at V
= ambient temperature for the package ( º C )
= power dissipation in package (W)
Thermal Characteristics
= junction to ambient thermal resistance ( º C / W )
Heat Dissipation
The maximum power depends on the supply voltage, process corner, junction temperature,
and the concrete application and clock configurations.
Rating
4
3
MPC5125 Microcontroller Data Sheet, Rev. 3
DD_SPLL
Table 11. Thermal Resistance Data
5
T
J
= AV
J
2
2
, can be obtained from the following equation:
= T
DD_CPLL
A
DD_IO
+ ( R
Single layer board – 1s
Four layer board – 2s2p
@ 200 ft./min., single layer board – 1s R
@ 200 ft./min., four layer board 2s2p
Natural convection
NOTE
θ
= 3.3 V, V
JA
= AV
×
P
DD_OSC_TMPS
D
)
Conditions
DD_MEM_IO
—
—
= 3.3 V, T
= 1.8 V, T
1
J
J
= 25 °C.
= 25 °C.
R
Sym Value Unit SpecID
R
R
R
R
Ψ
θJMA
θJMA
θJB
θJC
θJA
θJA
JT
Freescale Semiconductor
35
25
29
22
16
11
3
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Eqn. 3
D6.1
D6.2
D6.3
D6.4
D6.5
D6.6
D6.7