MPC5125YVN400 Freescale Semiconductor, MPC5125YVN400 Datasheet - Page 40

• Manufacturer Part Number: MPC5125YVN400
• Description: IC MCU 32BIT E300 324TEPBGA
• Manufacturer: Freescale Semiconductor
• Series: MPC51xxr

Specifications of MPC5125YVN400

• Core Processor: e300
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I²C, USB OTG
• Peripherals: DMA, WDT
• Number Of I /o: 64
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.33 V ~ 1.47 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 324-PBGA
• Processor Series: MPC51xx
• Core: e300
• Data Bus Width: 32 bit
• Development Tools By Supplier: TWR-MPC5125-KIT, TWR-SER, TWR-ELEV, TOWER
• Maximum Clock Frequency: 400 MHz
• Operating Supply Voltage: 1.4 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Data Ram Size: 32 KB
• I/o Voltage: 3.3 V
• Interface Type: CAN, I2C
• Minimum Operating Temperature: - 40 C
• Program Memory Size: 32 bit
• Cpu Speed: 400MHz
• Embedded Interface Type: CAN, I2C, SPI, UART, USB
• Digital Ic Case Style: TEPBGA
• No. Of Pins: 324
• Rohs Compliant: Yes
• Cpu Family: MPC5xx
• Device Core Size: 32b
• Frequency (max): 400MHz
• Total Internal Ram Size: 32KB
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 324
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical and Thermal Characteristics
NOTES:
1
NOTES:
1
2
3
4.1.4
40
General IO
Pad Type
Pad Type
1
V
V
General I/O—rise and fall times at drive load 50 pF.
DDR—rise and fall times at 50 Ω transmission line impedance terminated to MV
Rising slew rate measured between 0.5 × V
Falling slew rate measured between 0.5 × V
Sym
V
DDR
HBM
CDM
MM
Machine model (MM) — JEDEC JESD22-A115
Charge device model (CDM) — JEDEC JESD22-C101
Human body model (HBM) — JEDEC JESD22-A114-B
V
V
V
V
DD_IO_MEM
DD_IO_MEM
Electrostatic Discharge
DD_IO_MEM
DD_IO_MEM
This device contains circuitry that protects against damage due to high-static voltage or
electrical fields. However, it is advised that normal precautions be taken to avoid
application of any voltages higher than maximum-rated voltages. Operational
reliability is enhanced if unused inputs are tied to an appropriate logic voltage level (GND
or V
Supply Voltage
Supply Voltage
V
and SDR)
DD_IO
DD
= 1.8 V (LPDDR
= 1.8 V (DDR2) Configuration 2 (010)
).
= 2.5 V (DDR) Configuration 3 (011)
= 3.3 V (SDR) Configuration 7 (111)
Table 11
= 3.3 V
Table 7. General I/O Pads
Table 9. ESD and Latch-Up Protection Characteristics
Table 8. DDR I/O Pads
gives package thermal characteristics for this device.
MPC5125 Microcontroller Data Sheet, Rev. 3
Configuration 0 (000)
Configuration 1 (001)
Configuration 6 (110)
Slew Rate Control
Configuration 3 (11)
Configuration 2 (10)
Configuration 1 (01)
Configuration 0 (00)
Rating
Drive Select/Slew
DD_IO_MEM
DD_IO_MEM
Drive Select/
Rate Control
CAUTION
– 450 mV and 0.5 × V
+ 50 mV and 0.5 × V
1
— Drive Current, Slew Rate
1
— Drive Current, Slew Rate
Rising slew
max (ns)
Rise time
max (ns)
0.45
0.45
0.8
0.7
140
1.4
9.8
19
2
DD_IO_MEM
DD_IO_MEM
Falling slew
TT
max (ns)
max (ns)
Fall time
(0.5 × V
0.45
0.45
183
0.8
0.7
1.6
12
24
2000
– 450 mV for all modes.
Min
200
250
+ 50 mV for all modes.
3
DD_IO_MEM
Ioh (mA)
Current
Ioh (mA)
Current
16.2
13.4
35
4.6
8.1
5.3
Max
8
—
—
—
Freescale Semiconductor
) + 4 pF load.
Iol (mA)
Current
Current
Iol (mA)
Unit
16.2
13.4
35
4.6
8.1
5.3
V
V
V
8
SpecID
SpecID
SpecID
D3.41
D3.42
D3.43
D3.44
D3.45
D3.46
D3.47
D3.48
D3.49
D3.50
D4.1
D4.2
D4.3