MPC5125YVN400 Freescale Semiconductor, MPC5125YVN400 Datasheet - Page 39

• Manufacturer Part Number: MPC5125YVN400
• Description: IC MCU 32BIT E300 324TEPBGA
• Manufacturer: Freescale Semiconductor
• Series: MPC51xxr

Specifications of MPC5125YVN400

• Core Processor: e300
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I²C, USB OTG
• Peripherals: DMA, WDT
• Number Of I /o: 64
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.33 V ~ 1.47 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 324-PBGA
• Processor Series: MPC51xx
• Core: e300
• Data Bus Width: 32 bit
• Development Tools By Supplier: TWR-MPC5125-KIT, TWR-SER, TWR-ELEV, TOWER
• Maximum Clock Frequency: 400 MHz
• Operating Supply Voltage: 1.4 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Data Ram Size: 32 KB
• I/o Voltage: 3.3 V
• Interface Type: CAN, I2C
• Minimum Operating Temperature: - 40 C
• Program Memory Size: 32 bit
• Cpu Speed: 400MHz
• Embedded Interface Type: CAN, I2C, SPI, UART, USB
• Digital Ic Case Style: TEPBGA
• No. Of Pins: 324
• Rohs Compliant: Yes
• Cpu Family: MPC5xx
• Device Core Size: 32b
• Frequency (max): 400MHz
• Total Internal Ram Size: 32KB
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 324
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NOTES:
1
2
3
4
5
6
7
8
Freescale Semiconductor
Output high voltage
Output low voltage
Output low voltage
Output low voltage
Output low voltage
Output low voltage
DC injection current
per pin
Input capacitance
(digital pins)
Input capacitance
(analog pins)
On-die termination
(DDR2)
This parameter is meant for those who do not use quartz crystals or resonators, but instead use CAN oscillators in crystal
mode. In that case, V
This parameter is meant for those who do not use quartz crystals or resonators, but instead use a signal generator clock to
drive the clock in bypass mode. In this case, for the oscillator’s comparator to produce the output clock, drive only the EXTAL
pin. Do not connect anything to any other oscillator pin.
This parameter is meant for those who do not use quartz crystals or resonators, but instead use CAN oscillators in crystal
mode to drive the clock. In that case, for the oscillator’s comparator to produce the output clock, drive one of the XTAL_IN or
XTAL_OUT pins. Do not connect anything to the other oscillator pins.
This parameter is meant for those who do not use quartz crystals or resonators, but instead use a signal generator clock to
drive the clock in bypass mode. In that case, for the oscillator’s comparator to produce the output clock, drive only the XTAL_IN
pin. Do not connect anything to any other oscillator pin.
Leakage current is measured with output drivers disabled and with pullups and pulldowns inactive.
Pullup current is measured at V
See
listed in
All injection current is transferred to V
power supply within the specified voltage range.
Total injection current for all digital input-only and all digital input/output pins must not exceed 10 mA. Exceeding this limit can
cause disruption of normal operation.
Characteristic
Table 7
8
Table
for the typical drive capability of a specific signal pin based on the type of output driver associated with that pin as
2.
extal
IOL is driver dependent
IOH is driver dependent
IOL is driver dependent
IOL is driver dependent
IOL is driver dependent
IOL is driver dependent
– V
V
V
xtal
V
V
V
DD_IO_MEM_LPDDR
DD_IO_MEM_DDR2
DD_IO_MEM_DDR
DD_IO_MEM_SDR
DD_IO_MEM_SDR
IL
Table 6. DC Electrical Specifications (continued)
Condition
≥ 400 mV criteria has to be met for oscillator’s comparator to produce the output clock.
and pulldown current is measured at V
—
—
—
—
DD_IO
MPC5125 Microcontroller Data Sheet, Rev. 3
/V
DD_IO_MEM
7
V
DD_IO
7
7
7
7
7
V
. An external load is required to dissipate this current to maintain the
V
V
V
V
OLDDR2
OLLPDD
R
OHSDR
OLDDR
Sym
OLSDR
V
I
C
C
ODT
CS
R
OL
in
in
0.8 × VDD_IO_MEM
IH
.
−1.0
Min
120
—
—
—
—
—
—
—
Electrical and Thermal Characteristics
0.2 × V
0.2 × V
Max
0.36
0.28
0.28
180
DD_IO_MEM
1.0
10
—
7
DD_IO
Unit SpecID
mA
pF
pF
W
V
V
V
V
V
V
D3.35
D3.24
D3.25
D3.26
D3.27
D3.36
D3.29
D3.30
D3.31
D3.32
39