W25Q80BVSSIG Winbond Electronics, W25Q80BVSSIG Datasheet - Page 62

• Manufacturer Part Number: W25Q80BVSSIG
• Description: IC FLASH 8MBIT 8SOIC
• Manufacturer: Winbond Electronics

Specifications of W25Q80BVSSIG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 104MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4816329; T1015683

10.3 Power-up Timing and Write Inhibit Threshold
Note:
1. These parameters are characterized only.
VCC (min) to /CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
VCC
VCC
V
WI
(max)
(min)
VCC
Parameter
Reset
State
Program, Erase and Write Instructions are ignored
/CS must track VCC
Figure 38. Power-up Timing and Voltage Levels
Symbol
t
t
V
PUW
VSL
WI
- 62 -
(1)
(1)
(1)
tPUW
tVSL
Read Instructions
MIN
1.0
10
Allowed
1
spec
Device is fully
MAX
Accessible
2.0
10
W25Q80BV
Time
Unit
ms
µs
V