W25Q80BVSSIG Winbond Electronics, W25Q80BVSSIG Datasheet - Page 46

• Manufacturer Part Number: W25Q80BVSSIG
• Description: IC FLASH 8MBIT 8SOIC
• Manufacturer: Winbond Electronics

Specifications of W25Q80BVSSIG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 104MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4816329; T1015683

9.2.28
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction
“7Ah” will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY
bit equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set
from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will
complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume
instruction “7Ah” will be ignored by the device. The Erase/Program Resume instruction sequence is
shown in figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “t
Erase / Program Resume (7Ah)
(IO
CLK
/CS
DI
0
)
Mode 3
Mode 0
Figure 26. Erase/Program Resume Instruction Sequence
SUS
0
” following a previous Resume instruction.
1
Instruction (7Ah)
2
3
- 46 -
4
5
6
7
Resume previously
suspended Program or
Erase
Mode 3
Mode 0
W25Q80BV